Organosilicate glass (OSG) films are a critical component in modern electronic devices, with
their electrical properties playing a crucial role in device performance. This comprehensive …

Two approaches to the modeling of surface kinetics in reactive plasmas are discussed.
Coarse‐grained deterministic models incorporate rate balance equations for coverages of …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Oxygen vacancy OV plays an important role in a flash sintering (FS) process. In defect
engineering, the methods of creating oxygen vacancy defects include doping, heating, and …

Polytetrafluoroethylene was composited with low dielectric constant hollow SiO2 powders to
obtain an ultra-low dielectric constant high-frequency microwave composite substrate. The …

As critical dimensions in integrated circuits continue to shrink, the lithography-based
alignment of adjacent patterned layers becomes more challenging. Area-selective atomic …

Surfactant-templated porous organosilicate glass low-k films have been deposited by using
a tetraethoxysilane (TEOS) and methyltriethoxysilane (MTEOS) mixture with different ratios …

An ab initio approach with the density functional theory (DFT) method was used to study F
atom interactions with organosilicate glass (OSG)-based low-k dielectric films. Because of …

The developments in advanced interconnect technology for semiconductor logic devices for
the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials …

Modification of spin-on-deposited porous PMO (periodic mesoporous organosilica) ultralow-
k (ULK) SiCOH films (k= 2.33) containing both methyl terminal and methylene bridging …