Pseudopotential methods in condensed matter applications

WE Pickett - Computer Physics Reports, 1989 - Elsevier
The generalization from empirically determined screened pseudopotentials to self-
consistently screened ab initio pseudopotentials had led to widespread use of the method in …

The structure and properties of metal-semiconductor interfaces

LJ Brillson - Surface Science Reports, 1982 - Elsevier
In this review, we examine the contributions of surface science research to the
understanding of metal-semiconductor interfaces. In particular, we survey conventional …

[图书][B] Point defects in semiconductors I: theoretical aspects

M Lannoo - 2012 - books.google.com
From its early beginning before the war, the field of semiconductors has developped as a
classical example where the standard approximations of'band theory'can be safely used to …

Theory of substitutional deep traps in covalent semiconductors

HP Hjalmarson, P Vogl, DJ Wolford, JD Dow - Physical Review Letters, 1980 - APS
Theory of Substitutional Deep Traps in Covalent Semiconductors Page 1 VOLUME 44,
NUMBER 12 PHYSICAL REVIEW LETTERS 24 MARcH 1980 Finally, it is interesting to note …

Many-particle effects in the optical excitations of a semiconductor

W Hanke, LJ Sham - Physical Review Letters, 1979 - APS
We present (a) a general formulation of the electron-hole interaction which takes into
account both screened electron-hole attraction and its exchange counterpart, giving rise to …

Electronic-structure calculations by first-principles density-based embedding of explicitly correlated systems

N Govind, YA Wang, EA Carter - The Journal of chemical physics, 1999 - pubs.aip.org
A first-principles embedding theory that combines the salient features of density functional
theory (DFT) and traditional quantum chemical methods is presented. The method involves …

A method of embedding

JE Inglesfield - Journal of Physics C: Solid State Physics, 1981 - iopscience.iop.org
A surface potential is derived which can be added to the Schrodinger equation for a limited
region of space, I, to embed it into a substrate. This potential, which is energy-dependent …

Theory of the silicon vacancy: An Anderson negative- system

GA Baraff, EO Kane, M Schlüter - Physical Review B, 1980 - APS
We present a quantitative theory of electron states associated with strongly lattice-coupled
localized defects. Using the total energy functional, we derive optical transition energies …

Self-consistent impurity calculations in the atomic-spheres approximation

O Gunnarsson, O Jepsen, OK Andersen - Physical Review B, 1983 - APS
We have developed a method for calculating self-consistently the electronic structure around
an impurity atom, or an impurity cluster, in a crystalline host. Our method is a Green-function …

Microscopic theory of atomic diffusion mechanisms in silicon

R Car, PJ Kelly, A Oshiyama, ST Pantelides - Physica B+ C, 1984 - Elsevier
Self-interstitials in Si are known to migrate athermally at very low temperatures (− 4 K). In
contrast, at hightemperatures (1100–1600 K), self-diffusion has an activation energy of− 5 …