Recent Advances in Ferroelectric‐Enhanced Low‐Dimensional Optoelectronic Devices
Ferroelectric (FE) materials, including BiFeO3, P (VDF‐TrFE), and CuInP2S6, are a type of
dielectric material with a unique, spontaneous electric polarization that can be reversed by …
dielectric material with a unique, spontaneous electric polarization that can be reversed by …
The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications
In recent years, there has been growing interest in functional devices based on two-
dimensional (2D) materials, which possess exotic physical properties. With an ultrathin …
dimensional (2D) materials, which possess exotic physical properties. With an ultrathin …
[HTML][HTML] The rise of 2D materials/ferroelectrics for next generation photonics and optoelectronics devices
Photonic and optoelectronic devices have been limited in most two-dimensional (2D)
materials. Researchers have attempted diverse device structures, such as introducing some …
materials. Researchers have attempted diverse device structures, such as introducing some …
Enhanced memristive effect of laser-reduced graphene and ferroelectric MXene-based flexible trilayer memristors
Ferroelectric memory devices based on 2D materials are gaining popularity in research due
to having non-volatile data storage, low power consumption and improved endurance and …
to having non-volatile data storage, low power consumption and improved endurance and …
[HTML][HTML] Functional interface layer for a high-performance self-rectifying memristive device using hafnium-zirconia thin film
SY Jeong, J Jung, HK Seo, JS Jeong, JH Lee… - Results in …, 2024 - Elsevier
With the accelerated development of artificial intelligence-oriented hardware components,
research on low-power, high-density memory devices is actively being conducted. Among …
research on low-power, high-density memory devices is actively being conducted. Among …
Unveiling the Resistive Switching Mechanism and Low Current Dynamics of Ru‐based Hybrid Synaptic Memristors
DS Woo, SM Jin, JK Kim, GH Park… - Advanced Functional …, 2024 - Wiley Online Library
Mobile Ru ions in oxide media have been reported as a novel species that offer extremely
low switching currents for memristors. However, their bi‐stable resistive‐switching (RS) and …
low switching currents for memristors. However, their bi‐stable resistive‐switching (RS) and …