High‐resolution crystal truncation rod scattering: application to ultrathin layers and buried interfaces
AS Disa, FJ Walker, CH Ahn - Advanced Materials Interfaces, 2020 - Wiley Online Library
In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation
rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk …
rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk …
Picoscale materials engineering
The way in which atoms bond to form a material—in particular the pattern of bond lengths
and angles—is the fundamental determinant of the properties of the resulting material …
and angles—is the fundamental determinant of the properties of the resulting material …
Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands
We have examined the formation mechanisms of InAs quantum dots (QDs) via annealing In
islands under As flux. We report two distinct mechanisms, droplet epitaxy (DE) and solid …
islands under As flux. We report two distinct mechanisms, droplet epitaxy (DE) and solid …
Elemental diffusion during the droplet epitaxy growth of In (Ga) As/GaAs (001) quantum dots by metal-organic chemical vapor deposition
Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots
(QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the …
(QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the …
Coupling of InAs/InP quantum dots to the plasmon resonance of In nanoparticles grown by metal-organic vapor phase epitaxy
J Yuan, CY Jin, M Skacel, A Urbańczyk, T Xia… - Applied Physics …, 2013 - pubs.aip.org
We report strongly modified optical emission of InAs/InP quantum dots (QDs) coupled to the
surface plasmon resonance (SPR) of In nanoparticles grown by metal-organic vapor phase …
surface plasmon resonance (SPR) of In nanoparticles grown by metal-organic vapor phase …
Preferential nucleation and growth of InAs/GaAs (0 0 1) quantum dots on defected sites by droplet epitaxy
A double-layer InAs/GaAs (0 0 1) quantum dot structure grown by droplet epitaxy was found
to have V-shaped defects, with the two arms of each defect originating from a buried …
to have V-shaped defects, with the two arms of each defect originating from a buried …
Morphology and growth of capped Ge/Si quantum dots
The morphology, atomic structure, and chemical composition of small (4 nm average height
and 20 nm average diameter), dense capped MBE-grown Ge/Si quantum dots are studied …
and 20 nm average diameter), dense capped MBE-grown Ge/Si quantum dots are studied …
Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions
E Cohen, N Elfassy, G Koplovitz, S Yochelis… - Sensors, 2011 - mdpi.com
In recent years, epitaxial growth of self-assembled quantum dots has offered a way to
incorporate new properties into existing solid state devices. Although the droplet …
incorporate new properties into existing solid state devices. Although the droplet …
[PDF][PDF] Spinrauschen in nulldimensionalen Strukturen
R Dahbashi - 2015 - repo.uni-hannover.de
In dieser Arbeit wird die Spindynamik lokalisierter Löcher in Halbleiter-Quantenpunkten mit
der Methode der Spinrauschspektroskopie untersucht. Diese Technik ermöglicht eine …
der Methode der Spinrauschspektroskopie untersucht. Diese Technik ermöglicht eine …
Studies of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy
SG Li, Q Gong, XZ Wang, CF Cao, ZW Zhou… - Optical and Quantum …, 2016 - Springer
We reported on growth conditions of InAs/GaAs quantum dots laser grown by gas source
molecular beam epitaxy. It was found that the uniformity and size of dots had a close …
molecular beam epitaxy. It was found that the uniformity and size of dots had a close …