Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have
matured dramatically over the last few years, and many hundreds of thousands of devices …

The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …

In this paper, an extensive review of the most up-to-date papers on microwave Doherty
power amplifiers is presented. The main applications are discussed, together with the …

A symmetrical Doherty power amplifier (PA) with an extended efficiency range is proposed.
This paper proves the existence of a class of symmetrical Doherty PAs having efficiency …

In modern wireless communication systems, it is very important to realize simultaneously
high-efficiency and linear operation of power amplifiers. This paper-overview describes the …

This paper derives the theory and presents measurements of a new power amplifier based
on the Doherty power amplifier topology. It is theoretically shown that the proposed amplifier …

A new Doherty amplifier configuration with an intrinsically broadband characteristic is
presented based on the synthesis of key ideas derived from the analyses of the load …

Eighty years ago, William Doherty invented a PA architecture that has played-and will
continue to play-an important role in the development of energy-efficient radio transmitters …

An analytical load—pull-based design methodology for three-stage Doherty power
amplifiers (PAs) is presented and demonstrated. A compact output combiner network …

Signals designed for high-capacity communications result in high peak-to-average ratio
(PAR) waveforms that the transmitter power amplifier (PA) must amplify with low distortion …