Recent trends on junction-less field effect transistors in terms of device topology, modeling, and application
Junction less field effect transistor, also known as JLFET, is widely regarded as the most
promising candidate that has the potential to replace the more conventional MOSFET used …
promising candidate that has the potential to replace the more conventional MOSFET used …
Design and performance assessment of a vertical feedback FET
This paper proposes the structure of a vertical PNPN single gated feedback field-effect
transistor (vertical FBFET) and investigates its performance using a TCAD simulator. The …
transistor (vertical FBFET) and investigates its performance using a TCAD simulator. The …
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
KH Hamza, D Nirmal, ASA Fletcher… - … -International Journal of …, 2021 - Elsevier
The dc and high frequency performances of Al composition Graded Channel AlGaN/GaN
high electron mobility transistor on GaN substrate was investigated and compared with …
high electron mobility transistor on GaN substrate was investigated and compared with …
A novel bottom-spacer ground-plane (BSGP) FinFET for improved logic and analog/RF performance
N Vadthiya, P Narware, V Bheemudu… - AEU-International Journal …, 2020 - Elsevier
FinFET for system-on-chip (SoC) applications like logic/SRAM need shorter fins, whereas in
analog/RF and global interconnect drivers need taller and multi-fins. To tackle this issue, we …
analog/RF and global interconnect drivers need taller and multi-fins. To tackle this issue, we …
High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters
In junctionless (JL) transistors, impurity scattering limits the carrier velocity within a channel,
disturbing its performance in analog/RF applications. For the first time, the Si/Si 0.5 Ge 0.5 …
disturbing its performance in analog/RF applications. For the first time, the Si/Si 0.5 Ge 0.5 …
A new trench double gate junctionless FET: a device for switching and analog/RF applications
In this work, a trench double-gate junctionless FET (TDG-JLFET) is proposed for switching
and analog/RF applications. In TDG-JLFET, the gates are placed vertically in separate …
and analog/RF applications. In TDG-JLFET, the gates are placed vertically in separate …
Improved statistical variability and delay performance with junctionless inserted oxide FinFET
V Jegadheesan, K Sivasankaran, A Konar - AEU-International Journal of …, 2020 - Elsevier
Junctionless inserted oxide FinFET (JL-iFinFET) is presented, its performance metrics are
quantified and compared with JL-FinFET and JL-Stacked-Nanowire-FET (JL-SNWFET) …
quantified and compared with JL-FinFET and JL-Stacked-Nanowire-FET (JL-SNWFET) …
Enhanced Biosensing with Double Gate Junctionless FET based on III–V Compound Semiconductor and Symmetric Cavity for Label-Free Detection of Neutral and …
M Shaveisi, M Vadizadeh, M Fallahnejad - Sensing and Imaging, 2024 - Springer
This paper introduces a novel dielectric engineered AlAs/GaAs-based double gate
junctionless FET (AlAs/GaAs-DGJLFET) for label-free detection in biosensor applications …
junctionless FET (AlAs/GaAs-DGJLFET) for label-free detection in biosensor applications …
Design and analysis of logic circuits based on 8 nm double gate MOSFET
S Kundu, JK Mandal - Microsystem Technologies, 2024 - Springer
This paper proposed an 8 nm N-type Double Gate MOSFET with improved characteristics. A
comparative study has been done based on substrate and oxide material. The substrate and …
comparative study has been done based on substrate and oxide material. The substrate and …
High Performance and Reliability Analysis of Implant Free Composite Channel In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET
A new approach for implementation of implant free In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47
As composite delta-doped stepped poly gate MOSFET is one of the challenging devices due …
As composite delta-doped stepped poly gate MOSFET is one of the challenging devices due …