On the grain size-thickness correlation for thin films

A Dulmaa, FG Cougnon, R Dedoncker, D Depla - Acta Materialia, 2021 - Elsevier
A meta-analysis of published data in combination with measurements on Al, Cu, CuO,
CoCrCuFeNi, Ni 90 Cr 10, TiN, and V sputter deposited thin films, demonstrates that the …

Thermal conductivity and interfacial effect of parylene C thin film using the 3-omega method

AA Guermoudi, PY Cresson, A Ouldabbes… - Journal of Thermal …, 2021 - Springer
Parylene has attracted a great interest in the last years because of its potential use in many
fields. Among all kinds of parylene, parylene C seems the most interesting one for a large …

Miniaturized planar Si-nanowire micro-thermoelectric generator using exuded thermal field for power generation

T Zhan, R Yamato, S Hashimoto, M Tomita… - … and Technology of …, 2018 - Taylor & Francis
For harvesting energy from waste heat, the power generation densities and fabrication costs
of thermoelectric generators (TEGs) are considered more important than their conversion …

Effect of the thermal boundary resistance in metal/dielectric thermally conductive layers on power generation of silicon nanowire microthermoelectric generators

T Zhan, S Ma, Z Jin, H Takezawa… - … applied materials & …, 2020 - ACS Publications
In microthermoelectric generators (μTEGs), parasitic thermal resistance must be suppressed
to increase the temperature difference across thermocouples for optimum power generation …

Using mosaicity to tune thermal transport in polycrystalline aluminum nitride thin films

S Singh, S Shervin, H Sun, M Yarali… - … applied materials & …, 2018 - ACS Publications
The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport
in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and …

Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

A El-Helou, Y Cui, MJ Tadjer… - Semiconductor …, 2020 - iopscience.iop.org
Gallium nitride (GaN) high electron mobility transistors (HEMTs) operate at high power
levels and are thus especially thermally-critical devices. Not only do they require innovative …

Thickness dependence of Al0. 88Sc0. 12N thin films grown on silicon

K Knisely, E Douglas, J Mudrick, M Rodriguez, P Kotula - Thin Solid Films, 2019 - Elsevier
The thickening behavior of aluminum scandium nitride (Al 0.88 Sc 0.12 N) films grown on Si
(111) substrates has been investigated experimentally using X-ray diffraction (XRD) …

Novel Ultrafast Transient Hot-Bridge Technique for Thermal Properties Measurement of Dielectric Thin Films

BE Belkerk, A Achour, B Garnier… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This article introduces an ultrafast transient hot-bridge (THB) technique for the microscale
measurement of thermal properties. The system comprises microfabricated heaters and …

Growth and characterization of NiO films on aluminum substrate as thermal interface material for LED application

AA Ahmed, M Devarajan, ME Raypah… - Surface and Coatings …, 2018 - Elsevier
In this work, NiO films of different layers (5, 10, 15 and 20) were coated on Al substrate by
using sol-gel spin coating technique. The crystallinity of the films was improved with …

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

W Tillmann, D Kokalj, D Stangier, V Schöppner… - Sensors, 2019 - mdpi.com
Thin film thermocouples are widely used for local temperature determinations of surfaces.
However, depending on the environment in which they are used, thin film thermocouples …