Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and
phosphorus transient enhanced diffusion as well as retention of channel boron profiles …

The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and
arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose …

Three-dimensional device (FinFET) doping requirements are challenging due to fin sidewall
doping, crystallinity control, junction profile control, and leakage control in the fin. In addition …

Steep retrograde doping devices were fabricated using undoped epitaxial Si channels with
inserted oxygen layers. The effects of boron transient enhanced diffusion (TED) on threshold …

This paper investigates the impact of channel percolation on low frequency noise (LFN).
Using transient enhanced diffusion (TED) of channel dopants, the degree of channel …

Insertion of partial monolayers of oxygen during silicon epitaxy (OI) has been shown
experimentally and by simulation to facilitate the blocking interstitials during oxidation and …

This thesis on “Improving low-voltage integrated power devices: a simulation and
experimental based study” marks the end of my graduation project, which completes my …