The disclosed technology relates generally to integrated circuit devices, and in particular to
cross-point memory arrays and methods for fabricating the same. In one aspect, a method of …

A method of fabricating a memory device is disclosed. In one aspect, the method comprises
patterning a first conductive line extending in a first direction. The method additionally …

The disclosed technology relates generally to integrated circuit devices, and in particular to
cross-point memory arrays and methods for fabricating the same. In one aspect, a memory …

A semiconductor device including an oxide-nitride-oxide (ONO) structure having a multi-
layer charge storing layer and methods of forming the same are provided. Generally, the …

A semiconductor structure and method to form the same. The semiconductor structure
includes a substrate having a non-volatile charge trap memory device disposed on a first …

6,939,767 B2 9, 2005 Hoefler et al. 2008/03O8876 A1 12/2008 Lee et al. 7,154,779 B2
12/2006 Mokhlesi et al. 2009/0050955 A1 2/2009 Akita et al. 7,183,159 B2 2/2007 Rao et al …

US7633125B2 - Integration of silicon boron nitride in high voltage and small pitch
semiconductors - Google Patents US7633125B2 - Integration of silicon boron nitride in high …

The disclosed technology generally relates to integrated circuit devices, and in particular to
cross-point memory arrays and methods for fabricating the same. Line stacks are formed …

Scaling a nonvolatile trapped-charge memory device and the article made thereby. In an
embodiment, scaling includes multiple oxidation and nitridation operations to provide a …

5,972,765 A 10, 1999 Clarket al. 7,390,718 B2 6/2008 Roizin et al. 5,972.804. A 10, 1999
Tobin et al. 7,410,857 B2 8/2008 Higashi et al. 6,015.739 A 1/2000 Gardner et al. 7.450, 423 …