Horizontal current bipolar transistor DC performance at cryogenic temperatures
F Bogdanović, L Marković, J Žilak… - IEEE electron device …, 2023 - ieeexplore.ieee.org
The DC current gain (of Si bipolar junction transistors (BJTs) reported so far decreases at
cryogenic temperatures (CT), or shows a very limited improvement at best. For temperatures …
cryogenic temperatures (CT), or shows a very limited improvement at best. For temperatures …
Double-emitter reduced-surface-field horizontal current bipolar transistor with 36 V breakdown integrated in BiCMOS at zero cost
A novel double-emitter horizontal current bipolar transistor (HCBT) with reduced-surface-
field (RESURF) region is presented. The structure is integrated with standard 0.18-μm …
field (RESURF) region is presented. The structure is integrated with standard 0.18-μm …
A TCAD-based analysis of substrate bias effect on asymmetric lateral SiGe HBT for THz applications
In this work, a new asymmetric lateral silicon germanium heterojunction bipolar transistor
(SiGe HBT) is proposed. This asymmetric structure allows one to modulate the carrier …
(SiGe HBT) is proposed. This asymmetric structure allows one to modulate the carrier …
Collector region design and optimization in horizontal current bipolar transistor (HCBT)
T Suligoj, M Koričić, H Mochizuki… - 2010 IEEE Bipolar …, 2010 - ieeexplore.ieee.org
Three different types of the n-collector region of Horizontal Current Bipolar Transistor
(HCBT) are analyzed and compared. The optimum n-collector profile suppresses the charge …
(HCBT) are analyzed and compared. The optimum n-collector profile suppresses the charge …
Double-emitter HCBT structure—A high-voltage bipolar transistor for BiCMOS integration
M Koricic, T Suligoj, H Mochizuki… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
Fabrication of a novel high-voltage double-emitter horizontal current bipolar transistor
(HCBT) structure integrated with the standard 0.18-μm CMOS and high-speed HCBT is …
(HCBT) structure integrated with the standard 0.18-μm CMOS and high-speed HCBT is …
Noise figure characterization of horizontal current bipolar transistor (HCBT)
Noise parameters of the Horizontal Current Bipolar Transistor (HCBT) Technology are
examined for the first time. Impact of technological parameters (ie, three different collector …
examined for the first time. Impact of technological parameters (ie, three different collector …
Analysis of horizontal current bipolar transistor (HCBT) characteristics for RF power amplifiers
The Horizontal Current Bipolar Transistors (HCBT) with different collector designs are
characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT …
characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT …
Horizontal current bipolar transistor (HCBT) technology for high linearity RF mixers
The high linearity downconversion active mixers are demonstrated in the horizontal current
bipolar transistor (HCBT) technology. The HCBTs fabricated by uniform n-collector doping …
bipolar transistor (HCBT) technology. The HCBTs fabricated by uniform n-collector doping …
Impact of emitter interface treatment on the horizontal current bipolar transistor (HCBT) characteristics and RF circuit performance
The impact of the HF cleaning step prior to the emitter α-Si deposition on the Horizontal
Current Bipolar Transistor (HCBT) electrical characteristics is analyzed A longer HF dip …
Current Bipolar Transistor (HCBT) electrical characteristics is analyzed A longer HF dip …
Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements
Load-pull and source-pull characterization of packaged Horizontal Current Bipolar
Transistor (HCBT) is performed at 2.4 GHz. A fully-calibrated, automated load-pull …
Transistor (HCBT) is performed at 2.4 GHz. A fully-calibrated, automated load-pull …