Quantum wave impedance calculation for an arbitrary piesewise constant potential
OI Hryhorchak - arXiv preprint arXiv:2010.06263, 2020 - arxiv.org
The method of a determination of a quantum wave impedance for an arbitrary piecewise
constant potential was developed. On the base of this method both the well-known iterative …
constant potential was developed. On the base of this method both the well-known iterative …
[HTML][HTML] Numerical Study of 2DEG Carrier Density of Quaternary AlInGaN-Based T-Gate MOSHEMT Grown on UWBG-β-Ga2O3 Substrate
N Amina, T Zine-eddine, M Zitouni, S Okba… - Power Electronic Devices …, 2025 - Elsevier
This paper presents a numerical simulation study of an E-mode AlInGaN/AlN/GaN metal
oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide …
oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide …
Influence of High-k Dielectric Materials on AlGaN/AlInGaN/GaN MOS-HEMT Grown on β-Ga2O3Substrate: Numerical Study
N Amina, M Zitouni, T Zineeddine - 2024 2nd International …, 2024 - ieeexplore.ieee.org
In this work, we have analyzed the influence of high-k dielectric materials including silicon
nitride (Si_3N_4), aluminum oxide (Al_2O_3), hafnium oxide (HfO_2), and titanium dioxide …
nitride (Si_3N_4), aluminum oxide (Al_2O_3), hafnium oxide (HfO_2), and titanium dioxide …