Lattice strain and defects analysis in nanostructured semiconductor materials and devices by high‐resolution X‐ray diffraction: theoretical and practical aspects
The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
[HTML][HTML] Recent progress in heterogeneous III-V-on-silicon photonic integration
Silicon (Si) photonics is a disruptive technology on the fast track to revolutionise integrated
photonics. An indispensable branch thereof, heterogeneous Si integration, has also evolved …
photonics. An indispensable branch thereof, heterogeneous Si integration, has also evolved …
Nanoscale chemical heterogeneity dominates the optoelectronic response of alloyed perovskite solar cells
Halide perovskites perform remarkably in optoelectronic devices. However, this exceptional
performance is striking given that perovskites exhibit deep charge-carrier traps and spatial …
performance is striking given that perovskites exhibit deep charge-carrier traps and spatial …
High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …
Single-crystalline PbTe film growth through reorientation
J Jung, SG Schellingerhout, OAH Van Der Molen… - Physical Review …, 2023 - APS
Heteroepitaxy enables the engineering of novel properties, which do not exist in a single
material. Two principal growth modes are identified for material combinations with a large …
material. Two principal growth modes are identified for material combinations with a large …
Potential monitoring during Ge electrochemical etching: Towards tunable double porosity layers
Abstract Porous Germanium (PGe) has emerged as a promising material for applications
such as substrate engineering, sensing, and energy storage, thanks to its uniquely versatile …
such as substrate engineering, sensing, and energy storage, thanks to its uniquely versatile …
Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates
J Zhang, X Yang, Y Feng, Y Li, M Wang, J Shen… - Physical Review …, 2020 - APS
The incorporation of point defects into semiconductors could substantially tailor their optical
and electrical properties as well as the spin-based quantum properties. In terms of structural …
and electrical properties as well as the spin-based quantum properties. In terms of structural …
Anisotropic mesoporous germanium nanostructures by fast bipolar electrochemical etching
Mesoporous germanium has received lately a growing interest in many fields. However, the
lack of flexibility and knowledge concerning its electrochemical etching remains important. In …
lack of flexibility and knowledge concerning its electrochemical etching remains important. In …
GaAsP/SiGe tandem solar cells on porous Si substrates
P Caño, M Hinojosa, I García, R Beanland, DF Marrón… - Solar Energy, 2021 - Elsevier
III-V compound semiconductors and SiGe alloys can be combined to develop multijunction
solar cells on Silicon substrates with optimum bandgap combinations. Current …
solar cells on Silicon substrates with optimum bandgap combinations. Current …
Facile and stable fabrication of wafer-scale, ultra-black c-silicon with 3D nano/micro hybrid structures for solar cells
Three-dimensional (3D) silicon (Si) nanostructures have attracted much attention in solar
cells due to their excellent broadband and omnidirectional light-harvesting properties …
cells due to their excellent broadband and omnidirectional light-harvesting properties …