[HTML][HTML] Diffusion of n-type dopants in germanium

A Chroneos, H Bracht - Applied Physics Reviews, 2014 - pubs.aip.org
Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Oxygen transport in perovskite and related oxides: A brief review

A Chroneos, RV Vovk, IL Goulatis, LI Goulatis - Journal of alloys and …, 2010 - Elsevier
Perovskites and related oxides are a very important class of functional materials that exhibit
a range of stoichiometries and crystal structures. The oxygen diffusion mechanisms and …

Oxygen diffusion in solid oxide fuel cell cathode and electrolyte materials: mechanistic insights from atomistic simulations

A Chroneos, B Yildiz, A Tarancón, D Parfitt… - Energy & …, 2011 - pubs.rsc.org
Solid oxide fuel cells are of technological interest as they offer high efficiency for energy
conversion in a clean way. Understanding fundamental aspects of oxygen self-diffusion in …

[图书][B] Dopants and defects in semiconductors

MD McCluskey, EE Haller - 2018 - books.google.com
Praise for the First Edition" The book goes beyond the usual textbook in that it provides more
specific examples of real-world defect physics... an easy reading, broad introductory …

Anisotropic oxygen diffusion in tetragonal La 2 NiO 4+ δ: molecular dynamics calculations

A Chroneos, D Parfitt, JA Kilner… - Journal of Materials …, 2010 - pubs.rsc.org
Molecular dynamics simulations, used in conjunction with a set of Born model potentials,
have been employed to study oxygen transport in tetragonal La2NiO4+ δ. We predict an …

Strain-induced changes to the electronic structure of germanium

H Tahini, A Chroneos, RW Grimes… - Journal of Physics …, 2012 - iopscience.iop.org
Density functional theory calculations (DFT) are used to investigate the strain-induced
changes to the electronic structure of biaxially strained (parallel to the (001),(110) and (111) …

Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

S Brotzmann, H Bracht, JL Hansen, AN Larsen… - Physical Review B …, 2008 - APS
The diffusion of self-atoms and n-type dopants such as phosphorus, arsenic, and antimony
in germanium was studied by means of isotopically controlled multilayer structures doped …

Oxygen defect processes in silicon and silicon germanium

A Chroneos, EN Sgourou, CA Londos… - Applied Physics …, 2015 - pubs.aip.org
Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

Composition dependence of Si and Ge diffusion in relaxed Si1− xGex alloys

R Kube, H Bracht, JL Hansen, AN Larsen… - Journal of Applied …, 2010 - pubs.aip.org
Diffusion of silicon (Si) and germanium (Ge) in silicon-germanium Si 1− x Ge x-isotope
heterostructures with Ge contents x= 0⁠, 0.05, 0.25, 0.45, and 0.70 was investigated in a …

Nonlinear structure-composition relationships in the GeSn/Si(100) () system

R Beeler, R Roucka, AVG Chizmeshya… - Physical Review B …, 2011 - APS
The compositional dependence of the cubic lattice parameter in Ge 1− y Sn y alloys has
been revisited. Large 1000-atom supercell ab initio simulations confirm earlier theoretical …