A charge-based analytical model for gate all around junction-less field effect transistor including interface traps
This article proposes an analytic charge-based model that incorporates interface trapping.
The model's applicability to all operating zones includes various interface trap charges with …
The model's applicability to all operating zones includes various interface trap charges with …
A Novel LG=40 nm AlN-GDC-HEMT on SiC Wafer with fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers
In this work, we report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-
channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the …
channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the …
Low-bandgap Material Engineering based TFET device for Next-Generation Biosensor Application-A Comprehensive review on Device structure and Sensitivity.
Abstract The Tunnel Field Effect Transistor (TFET) device has emerged as the potential
candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free …
candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free …
Simulation and numerical modeling of high‐efficiency CZTS solar cells with a BSF layer
The present paper deals with the photovoltaic performance‐based numerical evaluation of
copper–zinc–tin–sulfur (CZTS) solar cells embedded with CZTSe as a back surface field …
copper–zinc–tin–sulfur (CZTS) solar cells embedded with CZTSe as a back surface field …
Threshold voltage model development of N+ pocket vertical junctionless TFET (V-JL-TFET) as a label free biosensor
This work investigates into the potential application of an improved N+ pocket Vertical
Junctionless TFET (V-JL-TFET) as a label free biosensor. To calculate the sensitivity of the …
Junctionless TFET (V-JL-TFET) as a label free biosensor. To calculate the sensitivity of the …
Double gate double-channel AlGaN/GaN MOS HEMT and its applications to LNA with Sub-1 dB noise figure
The manuscript proposes a novel double gate double-channel AlGaN/GaN MOS high
electron mobility transistor (DG-DC-MOS-HEMT) for the low noise amplifier (LNA) …
electron mobility transistor (DG-DC-MOS-HEMT) for the low noise amplifier (LNA) …
Junctionless In0.3Ga0.7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications
In this paper, a junctionless (JL) In0. 3Ga0. 7As/GaAs FET with a shell-doped channel
(SDCh) for high-frequency electronics is investigated, and different electrical properties of …
(SDCh) for high-frequency electronics is investigated, and different electrical properties of …
Low-noise Si/Si0.5Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications
Impurity scattering in junctionless transistors reduces electron velocity in the channel, so the
performance of analog/RF at high frequencies degrades. For the first time, this study offers …
performance of analog/RF at high frequencies degrades. For the first time, this study offers …
Impact of varying channel length on Analog/RF performances in a novel n-type Silicon-based DG-JLT.
Shrinking MOSFETs suffer performance hits due to short-channel effects and leakage.
Junctionless transistors JLTs emerge as promising alternatives due to simpler fabrication …
Junctionless transistors JLTs emerge as promising alternatives due to simpler fabrication …
Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications
In this work, a comprehensive investigation on the noise performance of novel optimized
back‐barrier engineered GaN based trigate HEMT (BB‐trigate HEMT), have been carried …
back‐barrier engineered GaN based trigate HEMT (BB‐trigate HEMT), have been carried …