Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …

The electronic functionalities of metal oxides comprise conductors, semiconductors, and
insulators. Metal oxides have attracted great interest for construction of large‐area …

Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication
of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) …

The fabrication of water-induced amorphous high-k zirconium oxide (ZrOx) dielectrics has
been proposed with the objective of achieving high performance and reducing costs for next …

The effects of gallium doping into indium–zinc–tin oxide (IZTO) thin film transistors (TFTs)
and Ar/O2 plasma treatment on the performance of a‐IZTO TFT are reported. The Ga doping …

Zirconium oxide is a promising dielectric material for electronic applications due to favorable
properties such as large band gap and high dielectric constant. It is compatible with solution …

We have proposed an optimized ZrO2 dielectric layer via solution processing for use in
amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). The optimized conditions …

Multicomponent oxide systems are one of the essential building blocks in a broad range of
electronic devices. However, due to the complex physical correlation between the cation …

InSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the
benefits of potential applications in the next generation of super-high-definition flat-panel …

In this study, we investigated the effects of hydrogen peroxide (H2O2) on solution-processed
zirconium oxide (ZrO2) dielectric materials. The addition of H2O2 into ZrO2 dielectric …