Oxide semiconductor thin‐film transistors: a review of recent advances
Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …
applications. The key components are wide bandgap semiconductors, where oxides of …
Printable semiconductors for backplane TFTs of flexible OLED displays
Studies on printable semiconductors and technologies have increased rapidly over recent
decades, pioneering novel applications in many fields, such as energy, sensing, logic …
decades, pioneering novel applications in many fields, such as energy, sensing, logic …
[HTML][HTML] Material characteristics and applications of transparent amorphous oxide semiconductors
Transparent amorphous oxide semiconductors have unique electron transport properties,
such as large electron mobility (10–50 cm 2/Vs) and the absence of a Hall voltage sign …
such as large electron mobility (10–50 cm 2/Vs) and the absence of a Hall voltage sign …
Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing
E Fortunato, R Barros, P Barquinha… - Applied Physics …, 2010 - pubs.aip.org
P-type thin-film transistors (TFTs) using room temperature sputtered SnO x (x< 2) as a
transparent oxide semiconductor have been produced. The SnO x films show p-type …
transparent oxide semiconductor have been produced. The SnO x films show p-type …
High-Performance a-IGZO TFT With Gate Dielectric Fabricated at Room Temperature
JS Lee, S Chang, SM Koo… - IEEE electron device letters, 2010 - ieeexplore.ieee.org
We have investigated the high-performance oxide thin-film transistor (TFT) with an
amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO_2 gate dielectrics. The a …
amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO_2 gate dielectrics. The a …
The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays
JK Jeong - Semiconductor Science and Technology, 2011 - iopscience.iop.org
The purpose of this paper is to give an overview of the state-of-the-art of metal oxide thin-film
transistors (TFTs). First, the question of how to achieve high-performance oxide TFTs is …
transistors (TFTs). First, the question of how to achieve high-performance oxide TFTs is …
Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
Roles of H 2 O addition to an annealing atmosphere were investigated for amorphous In–Ga–
Zn–O thin-film transistors fabricated at room temperature. Although dry O 2 annealing …
Zn–O thin-film transistors fabricated at room temperature. Although dry O 2 annealing …
[图书][B] Transparent oxide electronics: from materials to devices
Transparent electronics is emerging as one of the most promising technologies for the next
generation of electronic products, away from the traditional silicon technology. It is essential …
generation of electronic products, away from the traditional silicon technology. It is essential …
Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor
S Parthiban, JY Kwon - Journal of Materials Research, 2014 - cambridge.org
In this review, we discuss the recent developments of high-performance and improved-
stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin …
stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin …
Amorphous oxide semiconductors: From fundamental properties to practical applications
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …