In this work, silicon microcrystals doped with a boron impurity to concentrations
corresponding to the metal-dielectric transition in silicon of 5.5· 1018 cm− 3 and a nickel …

Strain influence on the longitudinal magnetoresistance for the n-type conductivity InSb
whiskers doped by Sn to concentration 6· 10 16–6· 10 17 сm–3 was studied in the …

The transverse magnetoconductance of the n-type conductivity InSb whiskers doped by Sn
to concentration 4.4× 1016÷ 7.16× 1017 cm− 3 were studied in the temperature range 4.2÷ …

Strain influence on the behavior of temperature dependences of resistance was studied in
the n-type conductivity GaSb whiskers with tellurium concentration 1.7 10 18 сm–3 …

The transverse and longitudinal magnetoresistances of GaSb microcrystals with tellurium
doping concentration of 1.7× 10 17 cm− 3 under the influence of uniaxial compression strain …

The magnetoresistance of GaP x As1− x (x= 0.4) whiskers with a doping concentration of
silicon in the range from the dielectric side of metal-insulated transition (MIT)(~ 1017 cm− 3) …

Abstract The Bi2Se3 whisker temperature dependencies of resistance with palladium
doping concentration of (1÷ 2)× 1019 cm− 3 were studied in the range of 1.5÷ 77 K. At the …

The article is devoted to characteristics of charge carrier transfer in silicon microcrystals
modified with a transition metal admixture with an unfilled 3d+ local magnetic moment …

It was studied the electrical magnetoresistance of nickel-and boron-doped filamentary
silicon crystals in which a metal-insulator transition is observed. A giant magnetoresistance …

The field dependences of the magnetoresistance for germanium whiskers with gallium
doping concentration of 2⋅ 10 17 cm-3 were studied in the magnetic field range 0–14 T at …