Organosilicon compounds as single-source precursors for SiCN films production
E Ermakova, M Kosinova - Journal of Organometallic Chemistry, 2022 - Elsevier
Silicon carbonitride SiCN films have attracted considerable interest due to their outstanding
characteristics, such as dielectric, optical, mechanical properties, thermal stability, oxidation …
characteristics, such as dielectric, optical, mechanical properties, thermal stability, oxidation …
Hard silicon carbonitride thin‐film coatings produced by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 1 …
AM Wrobel, P Uznanski - Plasma Processes and Polymers, 2021 - Wiley Online Library
Amorphous silicon carbonitride films were produced by remote hydrogen microwave plasma
chemical vapor deposition (RP‐CVD) using aminosilanes:(dimethylamino) dimethylsilane …
chemical vapor deposition (RP‐CVD) using aminosilanes:(dimethylamino) dimethylsilane …
Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering
Radiofrequency reactive magnetron sputtering was used to deposit hydrogenated
amorphous silicon carbonitride (a-SiC x N y: H) at 400° C by sputtering a silicon target under …
amorphous silicon carbonitride (a-SiC x N y: H) at 400° C by sputtering a silicon target under …
Atmospheric pressure plasma polymerization of super-hydrophobic nano-films using hexamethyldisilazane monomer
C Huang, HH Lin, C Li - Plasma Chemistry and Plasma Processing, 2015 - Springer
The super-hydrophobic nano-films were synthesized by atmospheric pressure plasma jet
using hexamethyldisilazane. In this paper, the atmospheric pressure plasma jet reacting with …
using hexamethyldisilazane. In this paper, the atmospheric pressure plasma jet reacting with …
Wide variations of SiCxNy: H thin films optical constants deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma
S Bulou, L Le Brizoual, P Miska, L de Poucques… - Surface and Coatings …, 2012 - Elsevier
SiCxNy: H thin film growth has been achieved in N2/H2/Ar/hexamethyldisilazane microwave
plasma induced chemical vapor deposition process. Depending on the N2 and H2 flow …
plasma induced chemical vapor deposition process. Depending on the N2 and H2 flow …
Study of Cu diffusion behavior in carbon rich SiCN: H films deposited from trimethylphenylsilane
E Ermakova, K Mogilnikov, Y Rumyantsev, V Kichay… - Thin Solid Films, 2015 - Elsevier
Amorphous SiC x: H and SiC x N y: H films were grown on Si (100) substrates by plasma
enhanced chemical vapor deposition using trimethylphenylsilane as a precursor. Detailed …
enhanced chemical vapor deposition using trimethylphenylsilane as a precursor. Detailed …
SiCN: H thin films deposited by MW‐PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits
B Plujat, H Glénat, A Bousquet, L Frézet… - Plasma Processes …, 2020 - Wiley Online Library
Silicon carbonitride SiCN: H thin films are deposited with microwave plasma‐enhanced
chemical vapor deposition. Argon, ammonia, and tetramethylsilane (TMS)(Ar/NH3/Si (CH3) …
chemical vapor deposition. Argon, ammonia, and tetramethylsilane (TMS)(Ar/NH3/Si (CH3) …
Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H2/N2/Ar/Hexamethyldisilazane Gas Mixture
M Belmahi, S Bulou, A Thouvenin… - Plasma Processes …, 2014 - Wiley Online Library
SiCxNy: H thin films are obtained with the microwave plasma assisted chemical vapour
deposition (MPACVD) method in the gas mixture H2/Ar/Hexamethyldisilazane. When very …
deposition (MPACVD) method in the gas mixture H2/Ar/Hexamethyldisilazane. When very …
Preparation and optical properties of SiCN thin films deposited by reactive magnetron sputtering
As a kind of wide band gap semiconductor, silicon carbonitride (SiCN) becomes a hot
material to research because of its unique electrical, chemical, thermodynamic and …
material to research because of its unique electrical, chemical, thermodynamic and …
Amorphous silicon carbonitride thin‐film coatings produced by remote nitrogen microwave plasma chemical vapour deposition using organosilicon precursor
AM Wrobel, P Uznanski… - Applied …, 2017 - Wiley Online Library
Amorphous silicon carbonitride (a‐SiCN) films were produced by remote nitrogen plasma
chemical vapour deposition (RP‐CVD) from bis (dimethylamino) methylsilane precursor …
chemical vapour deposition (RP‐CVD) from bis (dimethylamino) methylsilane precursor …