Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives

T Zhao, J Guo, T Li, Z Wang, M Peng, F Zhong… - Chemical Society …, 2023 - pubs.rsc.org
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and
important step for their industrial applications. Chemical vapor deposition (CVD) is the most …

Fermi level pinning dependent 2D semiconductor devices: challenges and prospects

X Liu, MS Choi, E Hwang, WJ Yoo, J Sun - Advanced Materials, 2022 - Wiley Online Library
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

An overview of graphene and its derivatives reinforced metal matrix composites: Preparation, properties and applications

Z Zhao, P Bai, W Du, B Liu, D Pan, R Das, C Liu, Z Guo - Carbon, 2020 - Elsevier
Graphene (Gr) and its derivatives (such as graphene oxide (GO), reduced graphene oxide
(RGO), nanoparticles decorated graphene, etc.) reinforced metal matrix composites (MMC) …

Strategies, status, and challenges in wafer scale single crystalline two-dimensional materials synthesis

L Zhang, J Dong, F Ding - Chemical reviews, 2021 - ACS Publications
The successful exfoliation of graphene has given a tremendous boost to research on various
two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D …

A review on the use of DFT for the prediction of the properties of nanomaterials

P Makkar, NN Ghosh - RSC advances, 2021 - pubs.rsc.org
Nanostructured materials have gained immense attraction because of their extraordinary
properties compared to the bulk materials to be used in a plethora of applications in myriad …

One-dimensional electrical contact to a two-dimensional material

L Wang, I Meric, PY Huang, Q Gao, Y Gao, H Tran… - Science, 2013 - science.org
Heterostructures based on layering of two-dimensional (2D) materials such as graphene
and hexagonal boron nitride represent a new class of electronic devices. Realizing this …

Defect-Dominated Doping and Contact Resistance in MoS2

S McDonnell, R Addou, C Buie, RM Wallace… - ACS …, 2014 - ACS Publications
Achieving low resistance contacts is vital for the realization of nanoelectronic devices based
on transition metal dichalcogenides. We find that intrinsic defects in MoS2 dominate the …

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

C Gong, L Colombo, RM Wallace, K Cho - Nano letters, 2014 - ACS Publications
Density functional theory calculations are performed to unravel the nature of the contact
between metal electrodes and monolayer MoS2. Schottky barriers are shown to be present …

Density functionals for surface science: Exchange-correlation model development with Bayesian error estimation

J Wellendorff, KT Lundgaard, A Møgelhøj… - Physical Review B …, 2012 - APS
A methodology for semiempirical density functional optimization, using regularization and
cross-validation methods from machine learning, is developed. We demonstrate that such …

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

C Gong, H Zhang, W Wang, L Colombo… - Applied Physics …, 2013 - pubs.aip.org
Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional
materials are of interest for low-power logic devices. The monolayer transition metal …