As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …

Recently, back-end-of-line (BEOL) compatible indium oxide (In 2 O 3) thin-film transistors
(TFTs), grown by atomic layer deposition (ALD) with channel thickness of~ 1 nm and …

The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …

Interconnect reliability has been regarded as a discipline that must be seriously taken into
account from the early design phase of integrated circuit (IC). In order to study the status and …

A physics-based thermal model is developed to describe the self-heating effects (SHE) on
nanosheet MOSFETs. Three stages of transient temperature response due to the anisotropic …

High device density and high power density intensify the self-heating effect in scaled FinFET
circuits to degrade both device and back-end-of-line (BEOL) reliability. The boundary …

Aggressively scaled devices with high power density wrapped around the low thermal
conductivity material in narrow space are susceptible to self-heating effect, which includes …

The physics-of-failure (PoF) technique is a practical approach to evaluate the reliability of
semiconductor devices. However, the PoF approaches are usually insufficient in dealing …

A Cu–carbon hybrid interconnect was recently proposed as an alternate interconnect
structure for future VLSI applications because of its superior electrical performance over its …

We use an electro-thermal coupled Monte Carlo simulation framework to investigate the self-
heating effect (SHE) in 14 nm bulk nFinFETs with ambient temperature (TA) from 220 to 400 …