HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

With the advent of the generation of artificial intelligence (AI) based on big data-processing
technologies, next-generation memristor and memristive neuromorphic devices have been …

The present study reports a memory structure Al/V2O5/NiMnIn on a flexible stainless steel
(SS) substrate for neuromorphic applications. The fabricated device exhibits gradual SET …

Hardware neuromorphic systems are crucial for the energy‐efficient processing of massive
amounts of data. Among various candidates, hafnium oxide ferroelectric tunnel junctions …

Designing multifunctional and unconventional devices can be accomplished by synergistic
integration of several external features on a memory device. In the current study, a hybrid …

Memristors are considered one of the most promising new-generation memory technologies
due to their high integration density, fast read/write speeds, and ultra-low power …

Halide perovskite-based resistive switching memory (memristor) has potential in an artificial
synapse. However, an abrupt switch behavior observed for a formamidinium lead triiodide …

Apart from simulating biological synapses, memristors can also be used in the secure
encryption by exploiting their inherent random resistive switching (RS) properties. In this …

Memristive devices based on layered materials have the potential to enable low power
electronics with ultra-fast operations toward the development of next generation memory …

This study delves into the characterization of IGZO/ZnO bilayer memristors, examining the
impact of ZnO thickness and voltage scan rate on device performance. Bilayer memristors …