When a detuned and strong laser pulse acts on an optical transition, a Stark shift of the
corresponding energies occurs. We analyze how this optical Stark effect can be used to …

We demonstrate experimental results based on time-resolved photoluminescence
spectroscopy to determine the oscillator strength and the internal quantum efficiency (IQE) of …

Semiconductor quantum dots are solid state few‐level systems which can interact strongly
with light. As such, they can be used as a single photon source or to perform solid‐state …

Carrier dynamics including carrier relaxation and tunneling within a coupled InAs quantum
dot (QD)–In 0.15 Ga 0.85 As quantum well (QW) hybrid nanostructure are investigated using …

A systematic analysis of the hydrostatic pressure effects on the effective masses of holes in
strained single In x Ga 1− x As/GaAs quantum-well (Qw) is performed. The strain effect on …

We report the direct observation of coupling between a single self-assembled InAs quantum
dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states …

In this work, we calculate the two-dimensional quantum energy system of the In (Ga) As
wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model …

Time-resolved optical spin orientation spectroscopy was employed to investigate the
temperature-dependent electron spin injection in In 0.1 Ga 0.9 As quantum well (QW) and In …

The molecular beam epitaxy grown structures are investigated, comprising of InGaAs
quantum wells (QW) separated by a thin InGaAlAs barrier from InAs quantum dots (QDs) …

Tunnel-injection lasers promise various advantages in comparison to conventional laser
designs. In this paper, the physics of the tunnel-injection process is studied within a …