Surface preparation and deposited gate oxides for gallium nitride based metal oxide semiconductor devices
RD Long, PC McIntyre - Materials, 2012 - mdpi.com
The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate
dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of …
dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of …
The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
X Lu, K Yu, H Jiang, A Zhang… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Interface trapping is one of the most notorious effects that limit device performance in GaN-
based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a …
based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a …
Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
T Yamada, J Ito, R Asahara, K Watanabe… - Applied Physics …, 2017 - pubs.aip.org
The impact of thin Ga-oxide (GaO x) interlayers on the electrical properties of GaN-based
metal-oxide-semiconductor (MOS) devices was systematically investigated. Thin thermal …
metal-oxide-semiconductor (MOS) devices was systematically investigated. Thin thermal …
Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures
R Asahara, M Nozaki, T Yamada, J Ito… - Applied Physics …, 2016 - iopscience.iop.org
The superior physical and electrical properties of aluminum oxynitride (AlON) gate
dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface …
dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface …
Critical issues for interfaces to p-type SiC and GaN in power devices
Silicon carbide (SiC) and gallium nitride (GaN) are excellent wide band gap materials for
power electronics. In spite of the significant progresses achieved in the last years, there are …
power electronics. In spite of the significant progresses achieved in the last years, there are …
Formation of high-quality SiO2/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO2
K Onishi, T Kobayashi, H Mizobata… - Japanese journal of …, 2023 - iopscience.iop.org
While the formation of a GaO x interlayer is key to achieving SiO 2/GaN interfaces with low
defect density, positive fixed charge is rather easily generated through the reduction of GaO …
defect density, positive fixed charge is rather easily generated through the reduction of GaO …
Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs
L He, L Li, F Yang, Y Zheng, J Zhang, T Que, Z Liu… - Applied Surface …, 2021 - Elsevier
We correlate electical behaviors of recessed-gate Al 2 O 3/GaN MOS-FETs with the lattice
damage at MOS interface region by directly comparing plasma-etching (inductively coupled …
damage at MOS interface region by directly comparing plasma-etching (inductively coupled …
Nonthermal Plasma Synthesis of Gallium Nitride Nanoparticles: Implications for Optical and Electronic Applications
Group III nitrides, such as gallium nitride (GaN), play an important role in electroluminescent
devices and power electronics. They are also increasingly used as photocatalysts and …
devices and power electronics. They are also increasingly used as photocatalysts and …
High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth
L He, F Yang, L Li, Z Chen, Z Shen… - … on Electron Devices, 2017 - ieeexplore.ieee.org
In this paper, a normally off Al 2 O 3/AlN/GaN MISFET on Si substrate for achieving high
threshold voltage stability and uniformity is obtained based on selective area growth. A thin …
threshold voltage stability and uniformity is obtained based on selective area growth. A thin …