ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing

B Sun, G Zhou, L Sun, H Zhao, Y Chen, F Yang… - Nanoscale …, 2021 - pubs.rsc.org
The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …

Dielectric properties, microstructure and charge compensation of MnO2-doped BaTiO3-based ceramics in a reducing atmosphere

W Peng, L Li, S Yu, P Yang, K Xu - Ceramics International, 2021 - Elsevier
Based on the relationship of dipole formation and charge compensation, we prepared BaTiO
3-based (x% MnO 2-0.05% Nb 2 O 5–BaTiO 3, x% Mn–Nb-BT) ceramics using a solid-phase …

[HTML][HTML] Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors

Z Sun, S Huang, W Zhu, YA Birkhölzer, X Gao… - APL materials, 2023 - pubs.aip.org
BaTiO 3 thin films with different annealing times were grown on LSMO/STO (001) substrates
by pulsed laser deposition. An interesting phenomenon of loss-and-reappearance of the …

Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO3+δ Is a Space‐Charge Phenomenon

JM Börgers, J Kler, K Ran, E Larenz… - Advanced Functional …, 2021 - Wiley Online Library
In displaying accelerated oxygen diffusion along extended defects,(La, Sr) MnO3+ δ is an
atypical acceptor‐doped perovskite‐type oxide. In this study, 18O/16O diffusion experiments …

Second‐Order Memristor Based on All‐Oxide Multiferroic Tunnel Junction for Biorealistic Emulation of Synapses

A Khanas, C Hebert, L Becerra… - Advanced Electronic …, 2022 - Wiley Online Library
The brain has the ability to learn and evaluate as it receives and registers information.
Signals between neurons are transmitted via synapses whose plasticity is modulated by …

Voltage modulated long-term plasticity in perovskite heterostructured memristive synaptic devices with high-performance neuromorphic computing

J Zhang, H Li, T Liu, S Dong, S Xu, H Li… - Journal of Applied …, 2023 - pubs.aip.org
The development of neuromorphic computing is expected to enable the computer to realize
the integration of storage and computation. The development of memristors provides …

Ultra-high resistive switching current ratio and improved ferroelectricity and dielectric tunability performance in a BaTiO 3/La 0.7 Sr 0.3 MnO 3 heterostructure by …

X Zhang, X Chen, JP Cao, HW Wang, WY Deng… - Nanoscale, 2024 - pubs.rsc.org
A BaTiO3/SrCoO2. 5 (BTO/SCO) bilayer and a BTO single film were prepared by radio
frequency magnetron sputtering on La0. 7Sr0. 3MnO3 (LSMO) buffered SrTiO3 (001) …

The effect of graphene and reduced graphene oxide on the resistive switching behavior of La0. 7Ba0. 3MnO3

K Kumari, AD Thakur, SJ Ray - Materials Today Communications, 2021 - Elsevier
Future developments in the non-volatile memory design like resistive random access
memory (RRAM) holds the backbone of data-controlled applications. The present study …

Understanding and modulation of resistive switching behaviors in PbZr0. 52Ti0. 48O3/La0. 67Sr0. 33MnO3/Nb: SrTiO3 multilayer junctions

HY Zheng, Y Bai, Y Shao, HY Yu, B Chen, JL Lin… - Applied Surface …, 2022 - Elsevier
The insertion layer in the ferroelectric multilayer junctions plays a key role in regulating the
energy band structure of interface and their resistive switching behavior. Here, PbZr 0.52 Ti …

Defect dipole engineering enhanced the dielectric performance and reliability of Mn-doped BaTiO3-based multilayer ceramic capacitor

F Zhang, J Tan, P Wang, R Huang, HT Lin, X Huang… - Ceramics …, 2024 - Elsevier
Due to the tendency of base metallization of the inner electrodes in BaTiO 3 based
multilayer ceramic capacitors (MLCCs), they usually need to be sintered in reducing …