Design for manufacturability and reliability in extreme-scaling VLSI
In the last five decades, the number of transistors on a chip has increased exponentially in
accordance with the Moore's law, and the semiconductor industry has followed this law as …
accordance with the Moore's law, and the semiconductor industry has followed this law as …
[HTML][HTML] A review of the study on the electromigration and power electronics
Electromigration is a main challenge in the pursuit of power electronics, because physical
limit to increase current density in power electronics is electromigration (EM), whereas much …
limit to increase current density in power electronics is electromigration (EM), whereas much …
TSV-based 3-D ICs: Design methods and tools
Vertically integrated circuits (3-D ICs) may revitalize Moore's law scaling which has slowed
down in recent years. 3-D stacking is an emerging technology that stacks multiple dies …
down in recent years. 3-D stacking is an emerging technology that stacks multiple dies …
Electromigration-aware analog Router with multilayer multiport terminal structures
The combined effects of current densities and temperature in the interconnects may cause
the failure of a circuit due to electromigration (EM). EM becomes increasingly more relevant …
the failure of a circuit due to electromigration (EM). EM becomes increasingly more relevant …
Recovery-aware proactive TSV repair for electromigration lifetime enhancement in 3-D ICs
Electromigration (EM) becomes a major reliability concern in 3-D integrated circuits (3-D
ICs). To mitigate this problem, a typical solution is to use through-silicon via (TSV) …
ICs). To mitigate this problem, a typical solution is to use through-silicon via (TSV) …
Built-in Self-prevention (BISP) for runtime ageing effects of TSVs in 3D ICs
Abstract The adoption of Through-Silicon-Vias (TSVs) in Three-Dimensional Integrated
Circuits (3D ICs) is gaining momentum in the industry, thanks to the numerous advantages it …
Circuits (3D ICs) is gaining momentum in the industry, thanks to the numerous advantages it …
MORE-Stress: Model Order Reduction based Efficient Numerical Algorithm for Thermal Stress Simulation of TSV Arrays in 2.5 D/3D IC
Thermomechanical stress induced by through-silicon vias (TSVs) plays an important role in
the performance and reliability analysis of 2.5 D/3D ICs. While the finite element method …
the performance and reliability analysis of 2.5 D/3D ICs. While the finite element method …
Electromigration-aware local-via allocation in power/ground TSVs of 3-D ICs
S Wang, MB Tahoori - IEEE Transactions on Very Large Scale …, 2017 - ieeexplore.ieee.org
With increasing temperature and current density, electromigration (EM) becomes a major
interconnect reliability concern for 3-D integrated-circuits (3-D ICs). In 3-D power delivery …
interconnect reliability concern for 3-D integrated-circuits (3-D ICs). In 3-D power delivery …
Electromigration-aware clock tree synthesis for TSV-based 3D-ICs
T Lu, A Srivastava - Proceedings of the 25th edition on Great Lakes …, 2015 - dl.acm.org
In 3D-IC technology, electromigration (EM) degradation has become severe due to the high
thermal-mechanical stress induced by the Through-Silicon-Vias (TSVs). However, little has …
thermal-mechanical stress induced by the Through-Silicon-Vias (TSVs). However, little has …
Recovery-aware proactive TSV repair for electromigration in 3D ICs
S Wang, H Zhao, SXD Tan… - Design, Automation & …, 2017 - ieeexplore.ieee.org
Electromigration (EM) becomes a major reliability concern in three-dimensional integrated-
circuits (3D ICs). To mitigate this problem, a typical solution is to use TSV redundancy in a …
circuits (3D ICs). To mitigate this problem, a typical solution is to use TSV redundancy in a …