III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis

Y Wu, X Liu, A Pandey, P Zhou, WJ Dong… - Progress in Quantum …, 2022 - Elsevier
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Comparison and perspective of conventional and LED lighting for photobiology and industry applications

BS Wu, Y Hitti, S MacPherson, V Orsat… - … and Experimental Botany, 2020 - Elsevier
A vast interest in plant photobiological responses is growing in both academia and
commercial sectors, due to rapid developments in electrical lighting technology. Each …

[图书][B] Light-emitting diodes (2018)

EF Schubert - 2018 - books.google.com
The 1st edition of the book “Light-Emitting Diodes” was published in 2003. The 2nd edition
was published in 2006. The current 3rd edition of the book, a substantial expansion of the …

High power light-emitting diode junction temperature determination from current-voltage characteristics

A Keppens, WR Ryckaert, G Deconinck… - Journal of applied …, 2008 - pubs.aip.org
Optical and electrical characteristics of power light-emitting diodes (LEDs) are strongly
dependent on the diode junction temperature. However, direct junction temperature …

A critical review on the junction temperature measurement of light emitting diodes

C Cengiz, M Azarifar, M Arik - Micromachines, 2022 - mdpi.com
In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most
efficient alternative to conventional light sources. Yet, in comparison to other lighting …

Junction temperature in light-emitting diodes assessed by different methods

S Chhajed, Y Xi, T Gessmann, JQ Xi… - … and Applications IX, 2005 - spiedigitallibrary.org
The junction temperature of red (AlGaInP), green (GaInN), blue (GaInN), and ultraviolet
(GaInN) light-emitting diodes (LEDs) is measured using the temperature coefficients of the …

AlGaN multiple quantum well based deep UV LEDs and their applications

M Asif Khan - physica status solidi (a), 2006 - Wiley Online Library
In this paper we will describe the approaches that we have used to grow AlGaN‐based
multiple quantum well deep UV LED structures and to overcome issues of doping efficiency …

Transfer of GaN LEDs from sapphire to flexible substrates by laser lift-off and contact printing

J Chun, Y Hwang, YS Choi, T Jeong… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
We fabricate flexible GaN-based light-emitting diode (LED) systems by laser lift-off (LLO)
and transfer printing methods. LLO enables transferring a whole GaN LED layer from …

Modeling high power light-emitting diode spectra and their variation with junction temperature

A Keppens, WR Ryckaert, G Deconinck… - Journal of Applied …, 2010 - pubs.aip.org
Spectral radiant flux is the primary optical characteristic of a light source, determining the
luminous flux and color. Much research is dedicated to the modeling of light-emitting diode …

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

D Pierścińska - Journal of Physics D: Applied Physics, 2017 - iopscience.iop.org
This review focuses on theoretical foundations, experimental implementation and an
overview of experimental results of the thermoreflectance spectroscopy as a powerful …