Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

I Marri, E Degoli, S Ossicini - Progress in Surface Science, 2017 - Elsevier
Si nanocrystals have been extensively studied because of their novel properties and their
potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and …

Self‐assembled silicon nanocrystal arrays for photovoltaics

M Schnabel, C Weiss, P Löper… - … status solidi (a), 2015 - Wiley Online Library
Silicon nanocrystals (Si NCs) are a promising candidate for the top cell of Si tandem solar
cells since their bandgap exceeds that of bulk silicon and can be tuned by adjusting …

Preferential positioning of dopants and co-dopants in embedded and freestanding Si nanocrystals

R Guerra, S Ossicini - Journal of the American Chemical Society, 2014 - ACS Publications
In this work we aim at understanding the effect of n-and p-type substitutional doping in the
case of matrix-embedded and freestanding Si nanocrystals. By means of ab initio …

Graphene as transparent conducting layer for high temperature thin film device applications

GP Veronese, M Allegrezza, M Canino… - Solar Energy Materials …, 2015 - Elsevier
The use of graphene as transparent conducting layer in devices that require high
temperature processing is proposed. The material shows stability upon thermal treatments …

Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics

P Zhang, Y Feng, X Wen, W Cao, R Anthony… - Solar Energy Materials …, 2016 - Elsevier
Hot carrier generation in silicon (Si) quantum dots (QDs) is studied with power dependent
continuous wave photoluminescence (CWPL) spectroscopy. By taking sub-band gap …

A low thermal impact annealing process for SiO2-embedded Si nanocrystals with optimized interface quality

D Hiller, S Gutsch, AM Hartel, P Löper… - Journal of Applied …, 2014 - pubs.aip.org
Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications
can be produced by several industrially compatible physical or chemical vapor deposition …

Solubility of impurities in nanoparticles and nanoclusters

SV Bulyarskiy, VV Svetukhin - Materials Science and Engineering: B, 2021 - Elsevier
An important modern problem is the doping of nanoparticles with impurities, which allow the
creation of silicon nanoclusters (Si-NC) emitting light, and are also objects for solar energy …

A kinetic model of silicon nanocrystal formation

SV Bulyarskiy, VV Svetukhin - Silicon, 2021 - Springer
Silicon nanocrystals (SiNC) in silicon oxide is a promising material for many applications in
micro-and nanoelectronics. This article develops a theory of the kinetics of SiNC formation …

Kinetics of the formation and doping of silicon nanocrystals

SV Bulyarskiy, VV Svetukhin - Journal of Nanoparticle Research, 2020 - Springer
Silicon nanocrystals (Si-NC) in silicon oxide is a promising material for many applications in
micro-and nanoelectronics. This article develops a theory of the kinetics of Si-NC formation …

First principle studies of B and P doped Si nanocrystals

I Marri, E Degoli, S Ossicini - physica status solidi (a), 2018 - Wiley Online Library
The properties of n‐and p‐doped silicon nanocrystals obtained through ab initio calculations
are reviewed here. The aim is the understanding of the effects induced by substitutional …