Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications

Y Cho, J Heo, S Kim, S Kim - Surfaces and Interfaces, 2023 - Elsevier
Resistive random-access memory (RRAM) is a promising candidate for next-generation
nonvolatile memory (NVM). Furthermore, RRAM is highly suitable for integration as a …

Impact of Non-Volatile Memory Cells on Spiking Neural Network Annealing Machine With In-Situ Synapse Processing

ML Wei, M Yayla, SY Ho, JJ Chen… - … on Circuits and …, 2023 - ieeexplore.ieee.org
Solving constraint satisfaction problems (CSPs) is in high demand for various applications.
SNN serves as a competitive annealing machine that can solve the CSP more efficiently …

A TaOx-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Y Qin, Z Wang, Y Ling, Y Cai, R Huang - Electronics, 2021 - mdpi.com
Resistive random-access memory (RRAM) with the ability to store and process information
has been considered to be one of the most promising emerging devices to emulate synaptic …

Robust brain-inspired computing: On the reliability of spiking neural network using emerging non-volatile synapses

ML Wei, H Amrouch, CL Sung, HT Lue… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
A spiking neural network (SNN) with non-volatile memory synapses can facilitate an ideal
analog approach with low power consumption for intelligent applications. However …

CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

Y Zhang, X Zhao, X Ma, Y Liu, X Zhou, M Zhang… - Science China …, 2022 - Springer
Resistive switching random access memory (RRAM) is one of the most promising
candidates with high-density three-dimensional integration characteristics for next …

Three-Dimensional Resistive Random-Access Memory Based on Stacked Double-Tip Silicon Nanowires for Neuromorphic Systems

WJ Lee, B Kim, M Koo, Y Kim - ACS Applied Electronic Materials, 2024 - ACS Publications
Resistive random-access memory (RRAM) has garnered attention as a synaptic device for
neuromorphic systems. However, RRAM typically suffers from various issues, such as a high …

Uniform, fast, and reliable CMOS compatible resistive switching memory

Y Hao, Y Zhang, Z Wu, X Zhang, T Shi… - Journal of …, 2022 - iopscience.iop.org
Resistive switching random access memory (RRAM) is considered as one of the potential
candidates for next-generation memory. However, obtaining an RRAM device with …

[图书][B] 優化脈衝神經網絡推理: 架構設計與算法增強的協同方法

魏旻良 - 2024 - tdr.lib.ntu.edu.tw
摘要作為人工智能領域的一項重大進展, 脈衝神經網絡以其獨特且受大腦啟發的解題,
推理和推斷方法, 展現了巨大潛力. 這種潛力促使眾多組織和企業投入於算法和硬件設計的開發 …

Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

Y Qin, Z Wang, Q Chen, Y Ling, L Wu… - 2021 China …, 2021 - ieeexplore.ieee.org
In this work, the influence of localized metal ion doping on the uniformity and analog
behavior in TaOx-based RRAM is investigated. Experimental results show that Al ion local …