US7224601B2 - Oscillating-field assisted spin torque switching of a magnetic tunnel
junction memory element - Google Patents US7224601B2 - Oscillating-field assisted spin …

US7110287B2 - Method and system for providing heat assisted switching of a magnetic
element utilizing spin transfer - Google Patents US7110287B2 - Method and system for …

This invention describes a novel tunnel magnetoresistive (TMR) deposition process that can
enhance the signal-to-noise ratio (SNR) of a TMR reader. A method of manufacturing a …

6,714.444 6,771,534 6,791,868 6,829, 161 6,838,740 6,847,547 6,888,704 6,888,742
6,893,741 6,920,063 6,933,155 6,950,335 6,958,927 6,967,863 6,979,586 6,985,385 …

This invention relates generally to magnetic data Storage Systems, more particularly to
magnetoresistive read heads, and most particularly to Structures incorporating an insulat ing …

Various embodiments of the subject disclosure provide a double patterning process that
uses two patterning steps to produce a write structure having a nose shape with sharp …

5,639,547 A* 6/1997 Mitsuoka et a1."""""" 428/332 netic layer. The pinned layer is also a half
metallic ferro 5,721,654 A* 2/1998 Manako et a1.............. 360/110 magnet'The free layer is …

(57) ABSTRACT A method and apparatus of a spin-type magnetoresistance sensor having a
free and pinned magnetic layer Stacked with a non-magnetic interposed layer are disclosed …

A spin-valve magnetic transducing element. In one embodiment, a spin-valve magnetic
transducing element is disclosed in which a ferromagnetic tunneling junction film, including …

The present invention provides a spin-Valve magnetoresis tance Sensor in which are
formed, on top of the Substrate, free layers, and pinned layers, enclosing a nonmagnetic …