A closely coupled double-channel (DC) structure realized on an 8-inch GaN-on-Si wafer is
utilized to fabricate GaN high-electron-mobility-transistors (HEMTs) with enhanced RF …

A discrete GaN power transistor's substrate is typically connected to its source electrode.
However, on the GaN-on-Si power IC platform, the high-side transistor (HS-transistor) and …

In this paper, the impact of the undoped and recessed gate structure on the performance of
the silicon carbide metal semiconductor field effect transistor is presented. The importance of …

An analytical model considering the buffer acceptor traps is presented in this paper to study
the gate control capability in p-GaN gate AlGaN/GaN high-electron-mobility transistors …

The p-GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold
voltage (V_th) of the device is found to have a dynamic nature. When the device …

A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing
the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown …

In this article, an analytical model on the influence of the acceptor-type trap on the 2-
dimensional electron gas (2DEG) density is proposed for GaN metal-insulator …

In this study, normally-off recessed gate AlGaN/GaN MIS-HEMT with ALD-Al 2 O 3 gate
dielectric stack was fabricated. The influence of polarization Coulomb field (PCF) scattering …

Abstract An AlInN/GaN high electron mobility transistors (HEMTs) is designed to deplete the
two-dimensional electron gas (2DEG) under the gate by using the polarization modulation …

In this paper, we proposed a novel recess-free insulated-gate High Electron Mobility
Transistor (HEMT) with p-SnO 2 gate realizing high threshold voltage (V TH) over 2 V. p-SnO …