Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared …
Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for
advanced electronic and photonic devices with attractive features such as transferability and …
advanced electronic and photonic devices with attractive features such as transferability and …
Simulation of high-efficiency resonant-cavity-enhanced GeSn single-photon avalanche photodiodes for sensing and optical quantum applications
Two novel resonant-cavity-enhanced (RCE) GeSn single-photon avalanche photodiode
(SPAD) detectors are designed and simulated for high-efficiency single-photon detection at …
(SPAD) detectors are designed and simulated for high-efficiency single-photon detection at …
Mid-Infrared Photodetectors-based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor with an i-GeSn Absorber Layer
This work proposes a high-performance lattice-matched SiGeSn/GeSn/SiGeSn
heterojunction bipolar phototransistors (HPTs) and pin photodiodes grown on strain-free …
heterojunction bipolar phototransistors (HPTs) and pin photodiodes grown on strain-free …
GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 µm and 1.55 µm optical communication bands
Germanium-tin-on-insulator (GSOI) has emerged as a new platform for three-dimensional
(3D) photonic-integrated circuits (PICs). We report, to our knowledge, the first demonstration …
(3D) photonic-integrated circuits (PICs). We report, to our knowledge, the first demonstration …
Ge-on-Si avalanche photodiodes with photon trapping nanostructures for sensing and optical quantum applications
High-sensitivity Ge/Si avalanche photodiodes (APDs) have recently gained attention for their
application in sensing and optical communication due to their low cost and CMOS …
application in sensing and optical communication due to their low cost and CMOS …
Systematic study on photoexcited carrier dynamics related to defects in GeSn films with low Sn content at room temperature
Germanium–tin (GeSn) alloys have received much attention thanks to their optical/electrical
properties and their operation in the mid-infrared range. However, dislocations/defects in …
properties and their operation in the mid-infrared range. However, dislocations/defects in …
[PDF][PDF] Hamza Khelidj
L MASSON - 2021 - theses.fr
The Ge1–xSnx semiconductor shows interesting properties for optoelectronic applications.
In particular, Ge1–xSnx alloys with x≥ 0.1 should display a direct band gap. These alloys …
In particular, Ge1–xSnx alloys with x≥ 0.1 should display a direct band gap. These alloys …