The strong and controllable chemical sensitivity of organic semiconductors (OSCs) and the
amplification capability of transistors in circuits make use of OSC-based field-effect …

Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …

In recent years, due to the intriguing electrical and optical characteristics, two dimensional
layered transition metal dichalcogenides such as MoS 2 have attracted tremendous …

Whenever a compound crystal is cut normal to a randomly chosen direction, there is an
overwhelming probability that the resulting surface corresponds to a polar termination and is …

The control of material interfaces at the atomic level has led to novel interfacial properties
and functionalities. In particular, the study of polar discontinuities at interfaces between …

The requirements and development of high-k dielectric films for application in storage cells
of future generation flash and Dynamic Random Access Memory (DRAM) devices are …

Internal photoemission spectroscopy provides the most straightforward way to characterize
the relative energies of electron states at interfaces of insulators with metals and …

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

Metal oxide nanoparticles have gained popularity owing to their unique properties. Recently,
metal oxides, particularly rare-earth metal oxides, have been explored and used in several …