High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using
hydrogenated IGZO (IGZO: H) at a maximum process temperature of 150° C. IGZO: H was …

The low‐temperature polysilicon oxide (LTPO) complementary metal‐oxide‐semiconductor
(CMOS) thin‐film transistors (TFTs) is fabricated by p‐type low‐temperature polysilicon …

Oxide semiconductor thin film transistors (TFTs) are promising materials for adoption in
display and memory devices due to their large-area uniformity and low off-current …

In an effort to fabricate In–Ga–Zn oxide (IGZO) thin-film transistors (TFTs) that combine high
performance and high stability, we optimize sputtering conditions to create devices based on …

With decreasing dimensions and increasing complexity, semiconductor devices are getting
more difficult to fabricate. In particular the allowed deposition temperature becomes lower …

The effects of sputtered atom flux on the electrical properties of a-IGZO films before and after
thermal annealing were examined by varying the fluxes of sputtered atoms at the substrate …

The back-channel-etch amorphous InGaZnO (a-IGZO) double-layer thin-film transistor (DL-
TFT) consists of an a-IGZO layer with no oxygen flow (NOF) as a top layer and an a-IGZO …

In this study, the explanation of the enhanced negative-bias-illumination-temperature stress
stability (NBITS) of indium-zinc-oxide thin-film transistors (IZO TFTs) under terbium (Tb) …

The subgap density of states of amorphous indium gallium zinc oxide (a-IGZO) is obtained
using the ultrabroadband photoconduction response of thin-film transistors (TFTs). Density …

To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-
film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with …