[HTML][HTML] Effect of Si on the hydrogen-based direct reduction of Fe2O3 studied by XPS of sputter-deposited thin-film model systems
L Patterer, EB Mayer, S Mráz, PJ Pöllmann, M Hans… - Scripta Materialia, 2023 - Elsevier
Understanding the effect of gangue elements is of critical importance to optimize the
efficiency of hydrogen-based direct reduction (HyDR) of iron ore, as one of the key steps …
efficiency of hydrogen-based direct reduction (HyDR) of iron ore, as one of the key steps …
Wear of mold surfaces: Interfacial adhesion in precision glass molding
Micro-optical components, such as glass-based microlens arrays, have become essential in
applications relying on advanced optical systems such as 3D displays, optical fiber coupling …
applications relying on advanced optical systems such as 3D displays, optical fiber coupling …
Molecular dynamics study of interfacial load transfer capability in amorphous SiOx films deposited on alumina surfaces
Effective adhesion between AlO x and SiO x is important for protective coatings and high-k
films under extreme operating conditions. Here, we study the chemo-mechanical behavior of …
films under extreme operating conditions. Here, we study the chemo-mechanical behavior of …
Understanding the role of Pt addition on structure and thermal stability of CrWN glass molding coating in nitrogen molding atmosphere
W Zhang, D Yang, F Gong, Y Chen, T Chen, Z Xie… - Vacuum, 2024 - Elsevier
A novel Pt doping was designed to improve the thermal stability of CrWN coating in a
nitrogen atmosphere. The deposited CrWN coating possessed a multilayer structure and a …
nitrogen atmosphere. The deposited CrWN coating possessed a multilayer structure and a …
[HTML][HTML] DEPOSITION OF PtxIr(1–x) FILM STRUCTURES BY MOCVD FROM A COMBINATION OF PRECURSORS Me3Pt(acac)Py AND Ir(CO)2(acac)
SI Dorovskikh, KI Karakovskaya, ES Vikulova… - Journal of Structural …, 2022 - Springer
MOCVD processes of the deposition of Pt x Ir (1–x) films in the presence of H2 and O2 in the
temperature range 260-300° C on Si and Ti substrates using a combination of precursors …
temperature range 260-300° C on Si and Ti substrates using a combination of precursors …
[PDF][PDF] Chemically-induced changes at interfaces probed by XPS
L Patterer - 2023 - d-nb.info
The first part of this thesis is dedicated to the systematic investigation of the interfacial bond
formation between magnetron-sputtered Ti-Al-ON thin films deposited onto polycarbonate …
formation between magnetron-sputtered Ti-Al-ON thin films deposited onto polycarbonate …
ОСАЖДЕНИЕ ПЛЕНОЧНЫХ СТРУКТУР PT X IR (1-X) МЕТОДОМ MOCVD ИЗ КОМБИНАЦИИ ПРЕКУРСОРОВ ME 3 PT (ACAC) PY И IR (СО) 2 (ACAC)
СИ ДОРОВСКИХ, КИ КАРАКОВСКАЯ… - ЖУРНАЛ …, 2022 - elibrary.ru
Исследованы MOCVD процессы осаждения пленочных структур Pt x Ir (1-x) в
присутствии H 2 и O 2 в интервале температур 260-300 C на Si и Ti подложках из …
присутствии H 2 и O 2 в интервале температур 260-300 C на Si и Ti подложках из …