Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …

T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim… - Advanced …, 2023 - Wiley Online Library
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

Synthesis of Vacancy-Controlled Copper Iodide Semiconductor for High-Performance p-Type Thin-Film Transistors

HA Lee, K Yatsu, TI Kim, HI Kwon… - ACS Applied Materials & …, 2022 - ACS Publications
Copper iodide (CuI) has emerged as a promising p-type semiconductor material owing to its
excellent carrier mobility, high transparency, and solution processability. Although CuI has …

Multifunctional oxygen scavenger layer for high-performance oxide thin-film transistors with low-temperature processing

MS Kim, HT Kim, H Yoo, DH Choi… - … Applied Materials & …, 2021 - ACS Publications
In this study, the oxygen scavenger layer (OSL) is proposed as a back channel in the bilayer
channel to enhance both the electrical characteristics and stability of an amorphous indium …

Solution-processed oxide TFT based on bilayer channels with graded oxygen vacancy

Z Wang, Y Shi, Z Zhang, Y Dong… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
In this study, thin film transistors (TFTs) based on metal oxide with a regulated channel
prepared by solution process were fabricated. The front channel was composed of indium …

Performance improvement of self-aligned coplanar amorphous indium–gallium–zinc oxide thin-film transistors by boron implantation

SH Kang, IS Lee, K Kwak, KT Min… - ACS Applied …, 2022 - ACS Publications
The electrical properties and device stability of a self-aligned (SA) coplanar amorphous
indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) were investigated by …

Hydroxyl-induced stability and mobility enhancement for field effect transistor based on In2O3 nanofiber

Y Ding, T Li, B Yan, G Liu, F Shan - Applied Physics Letters, 2022 - pubs.aip.org
In this work, In 2 O 3 nanofibers were fabricated by electrospinning, and a field effect
transistor (FET) based on In 2 O 3 nanofibers was integrated. A hydroxyl-assisted strategy …

Highly stable oxide thin-film transistor-based complementary logic circuits under X-ray irradiation

K Yatsu, HA Lee, DH Kim, IJ Park… - ACS Applied Electronic …, 2022 - ACS Publications
A radiation-hard oxide-thin-film transistor (TFT)-based complementary metal–oxide–
semiconductor (CMOS) logic circuit composed of p-type tin oxide (SnO X) and n-type indium …

Thermal Dehydrogenation Impact on Positive Bias Stability of Amorphous InSnZnO Thin-Film Transistors

S Lee, YW Song, JM Park, J Lee, W Ham… - … Applied Materials & …, 2024 - ACS Publications
Recently, the growing demand for amorphous oxide semiconductor thin-film transistors
(AOS TFTs) with high mobility and good stability to implement ultrahigh-resolution displays …

Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors

M Saketh Ram, J Svensson… - ACS Applied Materials & …, 2023 - ACS Publications
Memristors implemented as resistive random-access memories (RRAMs) owing to their low
power consumption, scalability, and speed are promising candidates for in-memory …

Investigation on physical properties of IGZO thin films under the conditions of mixing oxygen and argon

Y Zhang, Y Pan - Coatings, 2022 - mdpi.com
Amorphous indium gallium zinc oxide (IGZO) is the most suitable material choice for
optoelectronic devices such as thin film transistor (TFT). However, usually, the physical …