In this paper, electrical and interfacial properties of MOS capacitors with atomic layer
deposited (ALD) Al_2O_3, HfO_2, and HfAlO gate dielectrics on sulfur-passivated (S …

Al 2 O 3 thin films were deposited by atomic layer deposition on HF-cleaned and NH 3
plasma-treated GaAs surfaces, respectively. The precursors used for Al 2 O 3 films are …

Structural and electrical properties of Hf O 2 and Hf O 2∕ Gd 2 O 3 gate stacks on p-Ga As
substrates have been investigated. It has been demonstrated that the presence of thin layer …

GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) using wet thermally
oxidized InAlP as the gate insulator are reported for the first time. Leakage current …

In this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the
surface problem of gate recess of InAlAs/InGaAs InP-based HEMTs. The problem of …

Al 2 O 3 thin films are grown by atomic layer deposition on GaAs substrates at 300 C. The
structural properties of the Al 2 O 3 thin film and the Al 2 O 3/GaAs interface are …

AlGaAs materials are used in a variety of cutting-edge devices and the band gap states after
the surface oxidization is found with Fermi level pinning. With first-principle calculations, we …

InAlAs was oxidized by UV and ozone process. Nanometer-order thin-oxide layers were
generated in proportion to the square root of the process period, although their correlation …

InAIP native oxide/GaAs metal-oxide-semiconductor (MOS) capacitors have been
characterized using bias-and temperature-dependent swept-frequency impedance …

Direct oxidation by an ultraviolet (UV) and ozone process and oxinitridation (plasma
nitridation after oxidation) of GaAs surfaces were used to form nanometer-scale gate …