DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate
M Jagadesh, A Karthikeyan, D Somasundaram - Microelectronics Journal, 2024 - Elsevier
Scandium aluminum nitride (Sc x Al 1-x N) is a promising material among group III nitrides,
offering outstanding polarization properties resulting in very large carrier densities. We …
offering outstanding polarization properties resulting in very large carrier densities. We …
Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications
R Natarajan, P Murugapandiyan, N Vigneshwari… - Micro and …, 2024 - Elsevier
Abstract The AlN/GaN heterostructure on the AlGaN back barrier with different buffer layer
structures using a silicon carbide (SiC) substrate was investigated in this work. This study …
structures using a silicon carbide (SiC) substrate was investigated in this work. This study …
Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics
P Murugapandiyan, K Sri Rama Krishna… - Journal of Electronic …, 2024 - Springer
A numerical simulation-based high-performance metal–insulator–semiconductor high
electron mobility transistors (MISHEMTs) on an ultra-wide band gap β-Ga2O3 (E g~ 4.8 eV) …
electron mobility transistors (MISHEMTs) on an ultra-wide band gap β-Ga2O3 (E g~ 4.8 eV) …
Comparative Analysis of GaN HEMT on β-Ga2O3 and conventional substrates for RF Applications
This work presents performance investigation of the impact of different substrates on GaN-
HEMTs, with an emphasis on important parameters including drain current …
HEMTs, with an emphasis on important parameters including drain current …
Modification of Gallium Nitride Defect Structure by Microwave Radiation Treatment
R Redko, G Milenin, N Safriuk‐Romanenko… - physica status solidi … - Wiley Online Library
GaN has incredible potential for applications in high‐electron‐mobility transistors, ultraviolet
light‐emitting diodes, and gas sensor systems. Herein, the results of the study of …
light‐emitting diodes, and gas sensor systems. Herein, the results of the study of …
Impact of AlGaN Barrier Composition on Enhancement-Mode GaN HEMTs on Ultra-Wide Band Substrate for RF Applications
R Natarajan, S Chinnaswamy… - … on Innovations in …, 2024 - ieeexplore.ieee.org
This paper investigates the influence of AlGaN barrier composition on the performance of
enhancement-mode GaN high electron mobility transistors (HEMTs) on β-Ga 2 O 3 …
enhancement-mode GaN high electron mobility transistors (HEMTs) on β-Ga 2 O 3 …
Investigate AlN/GaN HEMT performance for future RF and high voltage switching applications
R Natarajan, P Murugapandiyan… - … on Advances in …, 2024 - ieeexplore.ieee.org
This study investigates the enhancement of DC/RF performance in AlN/GaN HEMTs on β-
Ga_2O_3 through the exploration of varied back-barriers. The incorporation of Fe-doped …
Ga_2O_3 through the exploration of varied back-barriers. The incorporation of Fe-doped …