Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors
A comprehensive semi-empirical model is developed to elucidate the dark current dynamics
in InGaAs/GaAs nano-ridge photodetectors directly grown on 300 mm Si; both constant …
in InGaAs/GaAs nano-ridge photodetectors directly grown on 300 mm Si; both constant …
Accelerated dark current degradation study of monolithically integrated In0.2Ga0.8As/GaAs-on-Si nano-ridge photodetectors
The reliability of In 0.2 Ga 0.8 As/GaAs nano-ridge photodetectors monolithically integrated
on 300 mm Si substrates is first reported. Dark current increases and saturates at 2× 10-5 …
on 300 mm Si substrates is first reported. Dark current increases and saturates at 2× 10-5 …