True‐Red InGaN Light‐Emitting Diodes for Display Applications
R Armitage, Z Ren, M Holmes… - physica status solidi …, 2024 - Wiley Online Library
Red InGaN has attracted much attention recently for micro‐light‐emitting diode (microLED)
display applications. However, the consequences of spectral broadening are often …
display applications. However, the consequences of spectral broadening are often …
Dislocation suppresses sidewall‐surface recombination of micro‐LEDs
Nonradiative recombination rate that consists of dislocation‐related nonradiative
recombination rate (A0) and surface recombination rate (As) is one of the major parameters …
recombination rate (A0) and surface recombination rate (As) is one of the major parameters …
[HTML][HTML] Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence
We study the carrier dynamics for c-plane InGaN/GaN light-emitting diodes (LEDs) with
various emission wavelengths near the green gap using a small-signal electroluminescence …
various emission wavelengths near the green gap using a small-signal electroluminescence …
InGaN-based blue and red micro-LEDs: Impact of carrier localization
JH Park, M Pristovsek, DP Han, B Kim, SM Lee… - Applied Physics …, 2024 - pubs.aip.org
Herein, we investigate micro-light-emitting diodes (μLEDs) ranging in size from 160× 160 to
10× 10 μm 2 and report that the differences in the behavior of InGaN-based blue (∼ 460 nm) …
10× 10 μm 2 and report that the differences in the behavior of InGaN-based blue (∼ 460 nm) …
High Bandwidth GaN-based Micro-LEDs at Temperatures up to 400° C
Gallium-nitride-based, blue micro-light-emitting diodes (micro-LEDs) with electro-optical− 3
dB modulation bandwidths of 3.73 GHz at 11 kA/cm2 at room temperature and 4.00 GHz at 9 …
dB modulation bandwidths of 3.73 GHz at 11 kA/cm2 at room temperature and 4.00 GHz at 9 …
Epitaxial analysis of GaInP/AlGaInP red light-emitting diodes with ternary AlGaP quantum barriers for quantum efficiency enhancement
M Usman, U Habib, S Ali - Physica Scripta, 2024 - iopscience.iop.org
We have numerically analyzed Gallium Indium Phosphide (GaInP)/Aluminum Gallium
Indium Phosphide (AlGaInP) red light-emitting diodes (LEDs) by utilizing ternary Aluminum …
Indium Phosphide (AlGaInP) red light-emitting diodes (LEDs) by utilizing ternary Aluminum …
Enhancing light-matter coupling with electric fields in polar semiconductors
N Pant, R Armitage, E Kioupakis - arXiv preprint arXiv:2410.23591, 2024 - arxiv.org
We revisit the prevailing notion that spontaneous and piezoelectric polarization fields are
inherently detrimental to light emission in polar semiconductor heterostructures. Here, we …
inherently detrimental to light emission in polar semiconductor heterostructures. Here, we …
[HTML][HTML] GaAs-based red micro-light-emitting diodes with an oxide perimeter region for improved external quantum efficiency
S Min, WJ Choi, DH Kim, K Kim, J Park, HY Ryu… - AIP Advances, 2024 - pubs.aip.org
Red micro-light-emitting diodes (μ-LEDs) with AlGaInP/GaInP multiple quantum wells are
fabricated with an oxide perimeter region to control the current injection path. When the …
fabricated with an oxide perimeter region to control the current injection path. When the …
Recombination Rate Analysis of High-Speed Blue InGaN/GaN micro-LEDs at Elevated Temperatures
Recombination Rate Analysis of High-Speed Blue InGaN/GaN micro-LEDs at Elevated
Temperatures Page 1 Recombination Rate Analysis of High-Speed Blue InGaN/GaN micro-LEDs …
Temperatures Page 1 Recombination Rate Analysis of High-Speed Blue InGaN/GaN micro-LEDs …
Measurement of Cadmium Telluride Bilayer Solar Cells
CA Chime - 2024 - search.proquest.com
Photovoltaic (PV) technology is a green technology that uses devices and semiconducting
materials to generate power by converting the absorbed energy from solar to electrical …
materials to generate power by converting the absorbed energy from solar to electrical …