Tunnel FET is found to be a prominent candidate to address the various issues like short channel effects, thermionic limitation, which are dominant in MOSFET. It has grabbed the …
To improve the DC and analog/HF performance, a novel dual line tunneling based TFET (DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …
In this work, an analytical model for a twin gate Tunnel Field Effect Transistor's drain current operating in the subthreshold and superthreshold regions is proposed. Using this drain …
In this manuscript, an elevated source TFET with extended back gate (ES-EBG-TFET) based photosensor is designed to offer improvement in optical performance for detecting incident …
P Raut, DK Panda - Microelectronics Journal, 2024 - Elsevier
This work investigates into the potential application of an improved N+ pocket Vertical Junctionless TFET (V-JL-TFET) as a label free biosensor. To calculate the sensitivity of the …
As semiconductor technology advances, the exploration of novel materials and device architectures becomes imperative to meet the growing demands of integrated circuits for …
A Kaul, S Rewari, D Nand - Microsystem Technologies, 2024 - Springer
In this paper a Hetero-Dielectric Macaroni Channel Cylindrical Gate All Around FET (HD-MC CGAA FET) is proposed for reduced gate leakage analog application. The proffered device …
In this study, a novel spiking neuron based on double-gate ferroelectric tunnel field effect transistor (DG-FE-TFET) is proposed in the 50 nm technology node. Through calibrated …
The enhanced performances of Germanium (Ge) gate optically controlled field-effect transistors motivate researchers and designers to develop new infrared phototransistor (IR …