Recent trends on junction-less field effect transistors in terms of device topology, modeling, and application

P Raut, U Nanda, DK Panda - … Journal of Solid State Science and …, 2023 - iopscience.iop.org
Junction less field effect transistor, also known as JLFET, is widely regarded as the most
promising candidate that has the potential to replace the more conventional MOSFET used …

A review on emerging tunnel FET structures for high-speed and low-power circuit applications

CK Pandey, D Das, RNK Kadava… - 2023 IEEE Devices …, 2023 - ieeexplore.ieee.org
Tunnel FET is found to be a prominent candidate to address the various issues like short
channel effects, thermionic limitation, which are dominant in MOSFET. It has grabbed the …

Physics based analysis of a high-performance dual line tunneling TFET with reduced corner effects

T Ashok, CK Pandey - Physica Scripta, 2024 - iopscience.iop.org
To improve the DC and analog/HF performance, a novel dual line tunneling based TFET
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …

Analytical drain current model development of twin gate TFET in subthreshold and super threshold regions

P Raut, U Nanda, DK Panda - Microelectronics Journal, 2023 - Elsevier
In this work, an analytical model for a twin gate Tunnel Field Effect Transistor's drain current
operating in the subthreshold and superthreshold regions is proposed. Using this drain …

Performance investigation of elevated source EBG TFET based photosensor for near-infrared light sensing applications

T Ashok, CK Pandey - Micro and Nanostructures, 2024 - Elsevier
In this manuscript, an elevated source TFET with extended back gate (ES-EBG-TFET) based
photosensor is designed to offer improvement in optical performance for detecting incident …

Threshold voltage model development of N+ pocket vertical junctionless TFET (V-JL-TFET) as a label free biosensor

P Raut, DK Panda - Microelectronics Journal, 2024 - Elsevier
This work investigates into the potential application of an improved N+ pocket Vertical
Junctionless TFET (V-JL-TFET) as a label free biosensor. To calculate the sensitivity of the …

Optimization and analysis of Si/SiGe strained vertically stacked heterostructure on insulator FeFinFET for high performance analog and RF applications

K Verma, R Chaujar - Physica Scripta, 2024 - iopscience.iop.org
As semiconductor technology advances, the exploration of novel materials and device
architectures becomes imperative to meet the growing demands of integrated circuits for …

Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications

A Kaul, S Rewari, D Nand - Microsystem Technologies, 2024 - Springer
In this paper a Hetero-Dielectric Macaroni Channel Cylindrical Gate All Around FET (HD-MC
CGAA FET) is proposed for reduced gate leakage analog application. The proffered device …

A bio-inspired ferroelectric tunnel FET-based spiking neuron for high-speed energy efficient neuromorphic computing

MA Khanday, FA Khanday - Micro and Nanostructures, 2024 - Elsevier
In this study, a novel spiking neuron based on double-gate ferroelectric tunnel field effect
transistor (DG-FE-TFET) is proposed in the 50 nm technology node. Through calibrated …

Performance Assessment of a New Opto-ferroelectric-JL-FET IR Phototransistor: Impact of Negative Capacitance and Nanoparticle Plasmonics

F Djeffal, I Rahmani, H Ferhati - Plasmonics, 2024 - Springer
The enhanced performances of Germanium (Ge) gate optically controlled field-effect
transistors motivate researchers and designers to develop new infrared phototransistor (IR …