The large amount of light emitted from a light emitting diode (LED) being trapped inside the
semiconductor structure is the consequence of the large value of the refractive index. The …

The output enhancement of a green InGaN/GaN quantum-well (QW) light-emitting diode
(LED) through the coupling of a QW with localized surface plasmons (LSPs), which are …

The efficiencies of light emission and absorption are two key factors for the effective
operations of many optoelectronic devices. Those efficiencies can be improved through the …

An Ag protrusion array is fabricated on the p-GaN layer of an InGaN/GaN quantum-well
(QW) light-emitting diode (LED) for generating surface plasmon coupling with the radiating …

The experimental demonstrations of light-emitting diode (LED) fabrication with surface
plasmon (SP) coupling with the radiating dipoles in its quantum wells are first reviewed. The …

The enhanced and partially polarized output of a green light-emitting diode (LED), in which
its InGaN/GaN quantum well (QW) couples with surface plasmons (SPs) on a surface Ag …

GaN-based high brightness blue Light Emitting Diode (LED) marks the milestone of Solid
State Lighting (SSL) development which expands a brand-new horizon of illumination. SSL …

A theoretical model together with a numerical algorithm of surface plasmon (SP) coupling
are built for simulating SP-enhanced light color conversion from a shorter-wavelength …

The efficiency enhancement of light color conversion from blue quantum well (QW) emission
into red quantum dot (QD) emission through surface plasmon (SP) coupling by coating …

This paper proposes a surface-plasmon-enhanced GaN-LED based on the multilayered
rectangular nano-grating. This structure contains a SiO 2 film, a Ag film and a HfO 2 film …