Roadmap of spin–orbit torques

Q Shao, P Li, L Liu, H Yang, S Fukami… - IEEE transactions on …, 2021 - ieeexplore.ieee.org
Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

Memory devices and applications for in-memory computing

A Sebastian, M Le Gallo, R Khaddam-Aljameh… - Nature …, 2020 - nature.com
Traditional von Neumann computing systems involve separate processing and memory
units. However, data movement is costly in terms of time and energy and this problem is …

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu… - Nature, 2022 - nature.com
With the scaling of lateral dimensions in advanced transistors, an increased gate
capacitance is desirable both to retain the control of the gate electrode over the channel and …

Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications

F Zahoor, TZ Azni Zulkifli, FA Khanday - Nanoscale research letters, 2020 - Springer
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

Fully hardware-implemented memristor convolutional neural network

P Yao, H Wu, B Gao, J Tang, Q Zhang, W Zhang… - Nature, 2020 - nature.com
Memristor-enabled neuromorphic computing systems provide a fast and energy-efficient
approach to training neural networks,,–. However, convolutional neural networks (CNNs) …

Towards spike-based machine intelligence with neuromorphic computing

K Roy, A Jaiswal, P Panda - Nature, 2019 - nature.com
Guided by brain-like 'spiking'computational frameworks, neuromorphic computing—brain-
inspired computing for machine intelligence—promises to realize artificial intelligence while …

Graphene and two-dimensional materials for silicon technology

D Akinwande, C Huyghebaert, CH Wang, MI Serna… - Nature, 2019 - nature.com
The development of silicon semiconductor technology has produced breakthroughs in
electronics—from the microprocessor in the late 1960s to early 1970s, to automation …

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

W Banerjee, A Kashir, S Kamba - Small, 2022 - Wiley Online Library
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

In-memory computing with resistive switching devices

D Ielmini, HSP Wong - Nature electronics, 2018 - nature.com
Modern computers are based on the von Neumann architecture in which computation and
storage are physically separated: data are fetched from the memory unit, shuttled to the …

Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

W Zhang, R Mazzarello, M Wuttig, E Ma - Nature Reviews Materials, 2019 - nature.com
The global demand for data storage and processing has increased exponentially in recent
decades. To respond to this demand, research efforts have been devoted to the …