The hybridization of 2D materials and colloidal quantum dots (CQDs) has been
demonstrated to be an ideal platform for infrared photodetectors due to the high mobility of …

Abstract Lattice matched InGaAs/InP photodetector structure with an InP layer for in-device
passivation purposes has been analyzed numerically, an optimized design for mesa type …

Unipolar barrier detector design is a challenge for InGaAs material system since there is a
lack of proper barrier material that blocks majority carriers and allows unimpeded flow of …

Inclusion of an in-device passivation layer in mesa-based lattice-matched InGaAs
photodetectors provides a lower dark current than the conventional mesa type structures …

We propose a gate-controlled device structure for mesa-type infrared photon detectors with
the means of improving surface conditions. Additional terminal added to the pn-junction …

In this Letter, we demonstrate an ultra-broadband metamaterial absorber of unrivaled
bandwidth (BW) using extraordinary optical response of bismuth (Bi), which is the material …

Dark current optimization with band gap engineering has been numerically studied for
InGaAs nBn type infrared photodetectors. Undoped InAlGaAs grading layers are utilized in …

In this thesis, we presented mainly two applications that utilize two dimensional Silicon
photonic crystals. One application is an optical refractive index based gas/bio-sensor. The …

Electrical crosstalk of in-device passivated mesa-based InGaAs photodetectors has been
analyzed by a three-pixel mini array illuminated from the backside. In-device passivation of …

Despite intensive studies, for high-performance applications, lowering dark current is still a
challenging problem for pn-type infrared (IR) photodetectors. Over the last two decades …