Highlights•Review of the application of operando techniques on catalytic reactions.•The
determination of dynamic structure of catalysts under harsh conditions.•Challenge in …

Germanium is an important mainstream material for many nanoelectronic and sensor
applications. The understanding of diffusion at an atomic level is important for fundamental …

The relentless scaling of semiconductor devices pushes the doping level far above the
equilibrium solubility, yet the doped material must be sufficiently stable for subsequent …

The introduction of nitrogen-vacancy (N–V) defects in diamond is important as they have
impact on the optical and electronic properties of diamond-based devices. Here, spin …

Germanium-based materials are essential for the integration of Group IV optoelectronics in
silicon devices. In addition to tensile strain, high n-type doping is critical, as it provides …

An overview is given on the status of n‐type dopant activation and diffusion in Ge, based on
a standard ion implantation and annealing scheme. Emphasis is on defect engineering …

A p-type polycrystalline Ge (poly-Ge) film processed by UV and CO 2 laser annealing
reduces the hole concentration from 6× 10 18 to 2× 10 16 cm− 3, accompanied by poly-grain …

An annealing method capable of forming highly activated shallow junctions in Ge CMOS is
still lacking. For the first time, nonmelt submillisecond laser spike annealing (LSA) is …

While nitrogen doping has been investigated extensively in silicon, there is only limited
information on its interaction with vacancies in germanium, despite most point defect …

By employing a 355-nm nanosecond (ns) ultraviolet (UV) laser annealing, the impact of
fluorine (F) co-doping on the formation of a highly activated N-type shallow junction in …