Antifungal activity of polymer-based copper nanocomposite coatings

N Cioffi, L Torsi, N Ditaranto, L Sabbatini… - Applied Physics …, 2004 - pubs.aip.org
Eukaryotes, such as fungi, can be harmful pathogen agents, and the control of their
bioactivity is critical as humans are eukaryote organisms, too. Here, copper/polymer …

Extraction of carrier concentration and mobility of ZnO by mid-infrared reflectance spectroscopy

Y Fan, W Zheng, S Zhu, L Cheng, H Qi, L Li… - Journal of …, 2021 - Elsevier
As a representative of the third-generation semiconductors, ZnO has great development
potential in the fields of optics and electricity, so the measurement on its electrical properties …

ZnO nanorods on conductive substrates. Technology and features

F Sizov, Z Tsybrii, E Rudenko, M Svavil'nyi… - Nano-Structures & Nano …, 2023 - Elsevier
Abstract For obtaining ZnO nanorods (NRs) on the surface of highly conductive brass
substrates, the technology of surface oxidation in argon plasma ion flows was developed …

Second harmonic generation spectroscopy in the Reststrahl band of SiC using an infrared free-electron laser

A Paarmann, I Razdolski, A Melnikov… - Applied Physics …, 2015 - pubs.aip.org
The Reststrahl spectral region of silicon carbide has recently attracted much attention owing
to its potential for mid-infrared nanophotonic applications based on surface phonon …

Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

S Nakashima, T Kitamura, T Kato, K Kojima… - Applied Physics …, 2008 - pubs.aip.org
The free carrier concentration of n-4 H-Si C was deduced by Raman spectroscopy using LO
phonon plasmon coupled (LOPC) modes as a monitor band. We could determine the free …

Probing carrier concentration of doped GaN single crystals from LO phonon-plasmon coupled modes

L Li, S Zhu, L Cheng, H Qi, Y Fan, W Zheng - Journal of Luminescence, 2022 - Elsevier
Raman and infrared reflectance spectroscopy were used to study GaN single crystals with
different doping types and carrier concentrations. In different samples, the characteristic …

Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm− 3) by ion implantation/pulsed laser …

IM Podlesnykh, MS Kovalev, AA Nastulyavichus… - Materials Science in …, 2024 - Elsevier
Spectral range of crystalline silicon absorption could be extended to near-and even mid-
infrared region by its hyperdoping via ion-implantation technology, requiring the following …

Reststrahlen band infrared damping, microwave transparent AlN/polymeric film filters

F Sizov, Z Tsybrii, E Rudenko, I Korotash, M Vuichyk… - Vacuum, 2024 - Elsevier
The low-temperature (t≈ 20–30° C) technology of hybrid helicon-arc ion-plasma deposition
to grow the amorphous AlN layers on polymeric substrates for getting the IR blocking filters …

Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry

VC Agulto, T Iwamoto, Z Zhao, S Liu, K Kato… - Optics Letters, 2025 - opg.optica.org
Terahertz (THz) measurements are increasingly valued for nondestructive testing of
materials in power devices and other applications. Hence, there is a growing demand for …

Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

AV Afanasjev, VI Zubkov, VA Ilyin, VV Luchinin… - Technical Physics …, 2024 - Springer
A technique has been developed for frequency analysis of the IR reflection spectrum to
determine the thickness and order of the layers in the epitaxial structure of silicon carbide …