The current state of the field of semiconductor lasers operating in the spectral range near 1.3
μm and with an active region represented by an array of self-organized quantum dots is …

Single‐frequency semiconductor lasers represent a critical role in optical communications,
light detection and ranging systems, photonics integrated circuits, etc. Here, combining atom …

We show that the various techniques commonly used to measure the linewidth
enhancement factor can lead to different values when applied to quantum dot …

The linewidth enhancement factor (α H) is an important parameter for semiconductor lasers.
In this paper, we investigate, both theoretically and experimentally, the key parameters that …

InGaN/GaN disk-in-nanowire heterostructures on silicon substrates have emerged as
important gain media for the realization of visible light sources. The nature of quantum …

This paper explores the impact of gain medium on linewidth narrowing in integrated self-
injection locked III–V/SiN lasers, theoretically and experimentally. We focus on the effects of …

We present a theoretical analysis of the gain recovery and chirp characteristics of quantum-
dot semiconductor optical amplifier (QD-SOA). We have derived an analytical expression for …

We show that the long-established concept of a linewidth-enhancement factor α to describe
carrier-induced refractive index changes in semiconductor lasers breaks down in quantum …

High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize
high-performance telecom C-band lasers. In general, a longer emission (> 1550 nm) with a …

Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use
of lasers on silicon for photonic integration. The authors demonstrate the need for efficient …