A 1.5 µm laser diode has applications in eye-safe light detection and ranging (LiDAR) and
optical communications via photonic integrated circuits. Photonic-crystal surface-emitting …

We have developed an analytical model to determine the current gain of heterojunction
bipolar light-emitting transistors (HBLETs) with multiple-quantum-wells (MQWs) inserted into …

Developed from the authors' classroom-tested material, Semiconductor Laser Theory takes
a semiclassical approach to teaching the principles, structure, and applications of …

In this paper, we use an analytical model to investigate the optoelectronic characteristics of a
double quantum well vertical cavity tunneling injection transistor laser. We particularly study …

Small-and large-signal analyses of transistor lasers (TLs) are demonstrated for 0.98-μm
wavelength GaInAs/GaAs and 1.3-μm AlGaInAs/InP systems. The modulation bandwidth of …

Numerical analysis on the effect of number of quantum wells (QW) on the modulation and
distortion characteristics of 1300 nm Transistor Laser (TL) is reported. The terminal currents …

A comprehensive physical model that emphasizes carrier tunneling between quantum wells
(QWs) in the base of transistor lasers (TLs) is developed. This model relies on a set of …

We have developed the expressions for terminal currents in transistor lasers (TLs) having a
single quantum well (SQW) as well as multiple quantum wells (MQWs) of different well and …

In this work, characteristics of dual base transistor laser are numerically analyzed for the first
time. Active base region of the transistor laser is split into two unequal regions composing of …

We have solved the continuity equation for electrons in the base of an InGaP–GaAs–GaAs
heterojunction bipolar transistor laser (TL) in which the position of an InGaAs quantum well …