Electrical doping (that is, intentional engineering of carrier density) underlies most energy-
related and optoelectronic semiconductor technologies. However, for the intensely studied …

This review discusses recent advances and future research priorities in the transition-metal
dichalcogenide (TMD) field. While the community has witnessed tremendous advances …

ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as
promising candidates for next generation nanoelectronics. Because of their atomically-thin …

The outstanding chemical and physical properties of 2D materials, together with their
atomically thin nature, make them ideal candidates for metaphotonic device integration and …

Graphene and two-dimensional (2D) transition metal dichalcogenides (TMDs) have
attracted significant interest due to their unique properties that cannot be obtained in their …

Pesticides are the most hazardous among the various organic pollutants and possess a
great human and environmental threat. The pesticide is considered among the top deadly …

Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Air-stable doping of transition metal dichalcogenides is of fundamental importance to enable
a wide range of optoelectronic and electronic devices while exploring their basic material …

For each generation of semiconductors, the issue of doping techniques is always placed at
the top of the priority list since it determines whether a material can be used in the electronic …