Ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) thin film has obtained considerable attention for
emerging non-volatile memory (eNVM) and synaptic device applications. To our best …

This book covers semiconductor memory technologies from device bit-cell structures to
memory array design with an emphasis on recent industry scaling trends and cutting-edge …

Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal-oxide-
semiconductor (CMOS) platforms, have gained significant interest for energy efficient …

In this paper, we develop a compact model of antiferroelectric (AFE) capacitors. AFE
material, similar to the ferroelectric (FE) material, is a good candidate for non-volatile …

Here, we present an analytical procedure to extract the anisotropy constants of
antiferroelectric (AFE) materials from a few key features of the experimental polarization …

This paper provides a brief introduction to the phenomenological aspects of the polarization
in ferrroelectric materials, and then an analysis of a few selected topics related to the …

Ferroelectric nonvolatile memories offer ways to store information with different mechanisms
than the traditional charge based technologies. Fast operating speeds and low power …

In this paper, a three-dimensionally (3D)-stacked one transistor (1T) dynamic random-
access memory (DRAM) based on ferroelectric field-effect transistor (FeFET) has been …

The ever-growing demand for computing power, coupled with the surging data volume and
data-centric computing, fuels the pursuit of a revolutionary memory device to mitigate the …