Electronic properties and defect levels induced by n/p-type defect-complexes in Ge
Defect-complexes are point defects that significantly influence the geometric, optical, and
electrical properties of materials. Defect-complexes are known to improve the electronic and …
electrical properties of materials. Defect-complexes are known to improve the electronic and …
Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium
E Igumbor - Journal of Computational Electronics, 2024 - Springer
Defect levels induced by defect-complexes in Ge play important roles in device fabrication,
characterization, and processing. However, only a few defect levels induced by defect …
characterization, and processing. However, only a few defect levels induced by defect …
Ab␣ Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE)
The results of an ab␣ initio modelling of aluminium substitutional impurity (Al _\rm Ge<!
CDATA Al Ge), aluminium interstitial in Ge I _\rm Al I Al for the tetrahedral (T) and hexagonal …
CDATA Al Ge), aluminium interstitial in Ge I _\rm Al I Al for the tetrahedral (T) and hexagonal …
The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes
Abstract Au/Ni (20: 80) Schottky barrier diodes (SBDs) were resistively evaporated on
nitrogen-doped n–type 4H-SiC. Current-voltage (IV) and capacitance-voltage (CV) …
nitrogen-doped n–type 4H-SiC. Current-voltage (IV) and capacitance-voltage (CV) …
Rare earth interstitials in Ge: a hybrid density functional theory study
In this work, the results of density functional theory calculations for rare earth (Ce, Pr, Eu,
and Er) interstitials in Ge are presented. We employed the hybrid functional of Heyd …
and Er) interstitials in Ge are presented. We employed the hybrid functional of Heyd …
Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge
In this report, we used the hybrid density functional theory to systematically investigate the
formation of substitution–interstitial complex defects formed by group III (B, Al, Ga and In) …
formation of substitution–interstitial complex defects formed by group III (B, Al, Ga and In) …
Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study
The electronic behaviour of high-dose phosphorus implanted in 4 H-SiC is mainly desirable
to obtained lower sheet resistance of 4 H-SiC. Al doping on the other hand acts as an …
to obtained lower sheet resistance of 4 H-SiC. Al doping on the other hand acts as an …
Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC
Electrically active induced energy levels in semiconductor devices could be beneficial to the
discovery of an enhanced p or n-type semiconductor. Nitrogen (N) implanted into 4H–SiC is …
discovery of an enhanced p or n-type semiconductor. Nitrogen (N) implanted into 4H–SiC is …
Rare earth substitutional impurities in germanium: a hybrid density functional theory study
Abstract The Heyd, Scuseria, and Ernzerhof (HSE06) hybrid functional by means of density
functional theory has been used to model the electronic and structural properties of rare …
functional theory has been used to model the electronic and structural properties of rare …
Rare earth interstitial-complexes in Ge: hybrid density functional studies
We present results of the structural, energetic and electronic properties of rare earth (RE)
interstitial-complexes in Ge (RE Ge Ge i; for RE: Ce, Pr, Eu, Er and Tm). We used the Heyd …
interstitial-complexes in Ge (RE Ge Ge i; for RE: Ce, Pr, Eu, Er and Tm). We used the Heyd …